GB2046514A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
GB2046514A
GB2046514A GB8007113A GB8007113A GB2046514A GB 2046514 A GB2046514 A GB 2046514A GB 8007113 A GB8007113 A GB 8007113A GB 8007113 A GB8007113 A GB 8007113A GB 2046514 A GB2046514 A GB 2046514A
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United Kingdom
Prior art keywords
electrodes
substrate
semiconductor
semiconductor device
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB8007113A
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English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of GB2046514A publication Critical patent/GB2046514A/en
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/147—Semiconductor insulating substrates
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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    • H01L23/49838—Geometry or layout
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    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
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    • H01L2924/3011—Impedance

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Geometry (AREA)
  • Junction Field-Effect Transistors (AREA)
GB8007113A 1979-04-09 1980-03-03 Semiconductor device Withdrawn GB2046514A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US2842179A 1979-04-09 1979-04-09

Publications (1)

Publication Number Publication Date
GB2046514A true GB2046514A (en) 1980-11-12

Family

ID=21843361

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8007113A Withdrawn GB2046514A (en) 1979-04-09 1980-03-03 Semiconductor device

Country Status (5)

Country Link
JP (1) JPS55140272A (de)
DE (1) DE3013196A1 (de)
FR (1) FR2454185A1 (de)
GB (1) GB2046514A (de)
IT (1) IT8048031A0 (de)

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0063843A1 (de) * 1981-04-29 1982-11-03 Telecommunications Radioelectriques Et Telephoniques T.R.T. Hyperfrequenz-Schaltung
FR2507409A1 (fr) * 1981-06-03 1982-12-10 Radiotechnique Compelec Circuit hyperfrequence, notamment amplificateur a transistor a effet de champ
FR2516311A1 (fr) * 1981-11-06 1983-05-13 Thomson Csf Socle pour le montage d'une pastille semi-conductrice sur l'embase d'un boitier d'encapsulation, et procede de realisation de ce socle
FR2554275A1 (fr) * 1983-10-26 1985-05-03 Radiotechnique Compelec Dispositif de connexion pour un semi-conducteur de puissance
US4531145A (en) * 1980-08-04 1985-07-23 Fine Particle Technology Corporation Method of fabricating complex micro-circuit boards and substrates and substrate
FR2565030A1 (fr) * 1984-05-25 1985-11-29 Thomson Csf Structure de metallisations de reprise de contacts d'un dispositif semi-conducteur et dispositif dote d'une telle structure
WO1988009057A1 (en) * 1987-05-14 1988-11-17 Hughes Aircraft Company Two-terminal semiconductor diode arrangement
EP0293630A1 (de) * 1987-06-04 1988-12-07 Licentia Patent-Verwaltungs-GmbH Halbleiterkörper mit Wärmesenke
EP0362161A2 (de) * 1988-09-29 1990-04-04 Microwave Power, Inc. Verfahren zum Herstellen eines Substrates für integrierte Mikrowellen-Schaltungen
EP0376100A2 (de) * 1988-12-24 1990-07-04 Alcatel SEL Aktiengesellschaft Verfahren und Leiterplatte zum Montieren eines Halbleiter-Bauelements
US4970578A (en) * 1987-05-01 1990-11-13 Raytheon Company Selective backside plating of GaAs monolithic microwave integrated circuits
US5051811A (en) * 1987-08-31 1991-09-24 Texas Instruments Incorporated Solder or brazing barrier
GB2274200A (en) * 1991-10-29 1994-07-13 Gen Electric A High density interconnect structure including a spacer structure and a gap
US5449929A (en) * 1992-12-21 1995-09-12 Mitsubishi Denki Kabushiki Kaisha IPG transistor semiconductor integrated circuit device
WO1996013062A1 (en) * 1994-10-19 1996-05-02 Ceram Incorporated Apparatus and method of manufacturing stacked wafer array
US5703405A (en) * 1993-03-15 1997-12-30 Motorola, Inc. Integrated circuit chip formed from processing two opposing surfaces of a wafer
WO2000048248A1 (en) * 1999-02-10 2000-08-17 Telefonaktiebolaget Lm Ericsson (Publ) Semiconductor device with deep substrate contacts
US6515334B2 (en) * 1997-01-18 2003-02-04 Semiconductor Energy Laboratory Co., Ltd. Hybrid circuit and electronic device using same
EP1693891A2 (de) * 2005-01-31 2006-08-23 Interuniversitair Micro-Elektronica Centrum (IMEC) Verfahren zur Herstellung einer Halbleiteranordnung
US7442635B2 (en) 2005-01-31 2008-10-28 Interuniversitair Microelektronica Centrum (Imec) Method for producing a semiconductor device and resulting device
CN107980171A (zh) * 2016-12-23 2018-05-01 苏州能讯高能半导体有限公司 半导体芯片、半导体晶圆及半导体晶圆的制造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5778655U (de) * 1980-10-30 1982-05-15
IT1175541B (it) * 1984-06-22 1987-07-01 Telettra Lab Telefon Procedimento per la connessione a terra di dispositivi planari e circuiti integrati e prodotti cosi' ottenuti
JPH0821595B2 (ja) * 1987-07-28 1996-03-04 三菱電機株式会社 半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1524053A (fr) * 1951-01-28 1968-05-10 Telefunken Patent Circuit à corps solides constitués par une masse semi-conductrice comprenant des composants actifs incorporés et par une couche isolante comprenant des composants passifs, ainsi que par des conducteurs rapportés
FR1486855A (de) * 1965-07-17 1967-10-05
DE1933731C3 (de) * 1968-07-05 1982-03-25 Honeywell Information Systems Italia S.p.A., Caluso, Torino Verfahren zum Herstellen einer integrierten Halbleiterschaltung
US3648131A (en) * 1969-11-07 1972-03-07 Ibm Hourglass-shaped conductive connection through semiconductor structures
US3986196A (en) * 1975-06-30 1976-10-12 Varian Associates Through-substrate source contact for microwave FET

Cited By (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4531145A (en) * 1980-08-04 1985-07-23 Fine Particle Technology Corporation Method of fabricating complex micro-circuit boards and substrates and substrate
EP0063843A1 (de) * 1981-04-29 1982-11-03 Telecommunications Radioelectriques Et Telephoniques T.R.T. Hyperfrequenz-Schaltung
FR2505094A1 (fr) * 1981-04-29 1982-11-05 Trt Telecom Radio Electr Procede de realisation des circuits hyperfrequences
FR2507409A1 (fr) * 1981-06-03 1982-12-10 Radiotechnique Compelec Circuit hyperfrequence, notamment amplificateur a transistor a effet de champ
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EP1693891A3 (de) * 2005-01-31 2008-03-05 Interuniversitair Micro-Elektronica Centrum (IMEC) Verfahren zur Herstellung einer Halbleiteranordnung
US7442635B2 (en) 2005-01-31 2008-10-28 Interuniversitair Microelektronica Centrum (Imec) Method for producing a semiconductor device and resulting device
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CN107980171A (zh) * 2016-12-23 2018-05-01 苏州能讯高能半导体有限公司 半导体芯片、半导体晶圆及半导体晶圆的制造方法
CN107980171B (zh) * 2016-12-23 2022-06-24 苏州能讯高能半导体有限公司 半导体芯片、半导体晶圆及半导体晶圆的制造方法

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FR2454185A1 (fr) 1980-11-07
IT8048031A0 (it) 1980-02-28
JPS55140272A (en) 1980-11-01
DE3013196A1 (de) 1980-10-30

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