GB2046514A - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
- Publication number
- GB2046514A GB2046514A GB8007113A GB8007113A GB2046514A GB 2046514 A GB2046514 A GB 2046514A GB 8007113 A GB8007113 A GB 8007113A GB 8007113 A GB8007113 A GB 8007113A GB 2046514 A GB2046514 A GB 2046514A
- Authority
- GB
- United Kingdom
- Prior art keywords
- electrodes
- substrate
- semiconductor
- semiconductor device
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 239000004020 conductor Substances 0.000 claims abstract description 46
- 230000005669 field effect Effects 0.000 claims abstract description 31
- 239000013078 crystal Substances 0.000 claims description 3
- 239000002800 charge carrier Substances 0.000 claims 2
- 230000001419 dependent effect Effects 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 11
- 239000010931 gold Substances 0.000 description 11
- 229910052737 gold Inorganic materials 0.000 description 11
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 9
- 230000000875 corresponding effect Effects 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229940000425 combination drug Drugs 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
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- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/147—Semiconductor insulating substrates
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- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5384—Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors
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- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Geometry (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US2842179A | 1979-04-09 | 1979-04-09 |
Publications (1)
Publication Number | Publication Date |
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GB2046514A true GB2046514A (en) | 1980-11-12 |
Family
ID=21843361
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8007113A Withdrawn GB2046514A (en) | 1979-04-09 | 1980-03-03 | Semiconductor device |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS55140272A (de) |
DE (1) | DE3013196A1 (de) |
FR (1) | FR2454185A1 (de) |
GB (1) | GB2046514A (de) |
IT (1) | IT8048031A0 (de) |
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0063843A1 (de) * | 1981-04-29 | 1982-11-03 | Telecommunications Radioelectriques Et Telephoniques T.R.T. | Hyperfrequenz-Schaltung |
FR2507409A1 (fr) * | 1981-06-03 | 1982-12-10 | Radiotechnique Compelec | Circuit hyperfrequence, notamment amplificateur a transistor a effet de champ |
FR2516311A1 (fr) * | 1981-11-06 | 1983-05-13 | Thomson Csf | Socle pour le montage d'une pastille semi-conductrice sur l'embase d'un boitier d'encapsulation, et procede de realisation de ce socle |
FR2554275A1 (fr) * | 1983-10-26 | 1985-05-03 | Radiotechnique Compelec | Dispositif de connexion pour un semi-conducteur de puissance |
US4531145A (en) * | 1980-08-04 | 1985-07-23 | Fine Particle Technology Corporation | Method of fabricating complex micro-circuit boards and substrates and substrate |
FR2565030A1 (fr) * | 1984-05-25 | 1985-11-29 | Thomson Csf | Structure de metallisations de reprise de contacts d'un dispositif semi-conducteur et dispositif dote d'une telle structure |
WO1988009057A1 (en) * | 1987-05-14 | 1988-11-17 | Hughes Aircraft Company | Two-terminal semiconductor diode arrangement |
EP0293630A1 (de) * | 1987-06-04 | 1988-12-07 | Licentia Patent-Verwaltungs-GmbH | Halbleiterkörper mit Wärmesenke |
EP0362161A2 (de) * | 1988-09-29 | 1990-04-04 | Microwave Power, Inc. | Verfahren zum Herstellen eines Substrates für integrierte Mikrowellen-Schaltungen |
EP0376100A2 (de) * | 1988-12-24 | 1990-07-04 | Alcatel SEL Aktiengesellschaft | Verfahren und Leiterplatte zum Montieren eines Halbleiter-Bauelements |
US4970578A (en) * | 1987-05-01 | 1990-11-13 | Raytheon Company | Selective backside plating of GaAs monolithic microwave integrated circuits |
US5051811A (en) * | 1987-08-31 | 1991-09-24 | Texas Instruments Incorporated | Solder or brazing barrier |
GB2274200A (en) * | 1991-10-29 | 1994-07-13 | Gen Electric | A High density interconnect structure including a spacer structure and a gap |
US5449929A (en) * | 1992-12-21 | 1995-09-12 | Mitsubishi Denki Kabushiki Kaisha | IPG transistor semiconductor integrated circuit device |
WO1996013062A1 (en) * | 1994-10-19 | 1996-05-02 | Ceram Incorporated | Apparatus and method of manufacturing stacked wafer array |
US5703405A (en) * | 1993-03-15 | 1997-12-30 | Motorola, Inc. | Integrated circuit chip formed from processing two opposing surfaces of a wafer |
WO2000048248A1 (en) * | 1999-02-10 | 2000-08-17 | Telefonaktiebolaget Lm Ericsson (Publ) | Semiconductor device with deep substrate contacts |
US6515334B2 (en) * | 1997-01-18 | 2003-02-04 | Semiconductor Energy Laboratory Co., Ltd. | Hybrid circuit and electronic device using same |
EP1693891A2 (de) * | 2005-01-31 | 2006-08-23 | Interuniversitair Micro-Elektronica Centrum (IMEC) | Verfahren zur Herstellung einer Halbleiteranordnung |
US7442635B2 (en) | 2005-01-31 | 2008-10-28 | Interuniversitair Microelektronica Centrum (Imec) | Method for producing a semiconductor device and resulting device |
CN107980171A (zh) * | 2016-12-23 | 2018-05-01 | 苏州能讯高能半导体有限公司 | 半导体芯片、半导体晶圆及半导体晶圆的制造方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5778655U (de) * | 1980-10-30 | 1982-05-15 | ||
IT1175541B (it) * | 1984-06-22 | 1987-07-01 | Telettra Lab Telefon | Procedimento per la connessione a terra di dispositivi planari e circuiti integrati e prodotti cosi' ottenuti |
JPH0821595B2 (ja) * | 1987-07-28 | 1996-03-04 | 三菱電機株式会社 | 半導体装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1524053A (fr) * | 1951-01-28 | 1968-05-10 | Telefunken Patent | Circuit à corps solides constitués par une masse semi-conductrice comprenant des composants actifs incorporés et par une couche isolante comprenant des composants passifs, ainsi que par des conducteurs rapportés |
FR1486855A (de) * | 1965-07-17 | 1967-10-05 | ||
DE1933731C3 (de) * | 1968-07-05 | 1982-03-25 | Honeywell Information Systems Italia S.p.A., Caluso, Torino | Verfahren zum Herstellen einer integrierten Halbleiterschaltung |
US3648131A (en) * | 1969-11-07 | 1972-03-07 | Ibm | Hourglass-shaped conductive connection through semiconductor structures |
US3986196A (en) * | 1975-06-30 | 1976-10-12 | Varian Associates | Through-substrate source contact for microwave FET |
-
1980
- 1980-02-28 IT IT8048031A patent/IT8048031A0/it unknown
- 1980-03-03 GB GB8007113A patent/GB2046514A/en not_active Withdrawn
- 1980-04-03 DE DE19803013196 patent/DE3013196A1/de not_active Withdrawn
- 1980-04-08 JP JP4614280A patent/JPS55140272A/ja active Pending
- 1980-04-08 FR FR8007819A patent/FR2454185A1/fr not_active Withdrawn
Cited By (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4531145A (en) * | 1980-08-04 | 1985-07-23 | Fine Particle Technology Corporation | Method of fabricating complex micro-circuit boards and substrates and substrate |
EP0063843A1 (de) * | 1981-04-29 | 1982-11-03 | Telecommunications Radioelectriques Et Telephoniques T.R.T. | Hyperfrequenz-Schaltung |
FR2505094A1 (fr) * | 1981-04-29 | 1982-11-05 | Trt Telecom Radio Electr | Procede de realisation des circuits hyperfrequences |
FR2507409A1 (fr) * | 1981-06-03 | 1982-12-10 | Radiotechnique Compelec | Circuit hyperfrequence, notamment amplificateur a transistor a effet de champ |
FR2516311A1 (fr) * | 1981-11-06 | 1983-05-13 | Thomson Csf | Socle pour le montage d'une pastille semi-conductrice sur l'embase d'un boitier d'encapsulation, et procede de realisation de ce socle |
EP0079265A1 (de) * | 1981-11-06 | 1983-05-18 | Thomson-Csf | Verfahren zum Herstellen eines Sockels zum Montieren eines Halbleiterchips auf die Basis eines Verkapselungsgehäuses |
FR2554275A1 (fr) * | 1983-10-26 | 1985-05-03 | Radiotechnique Compelec | Dispositif de connexion pour un semi-conducteur de puissance |
EP0166633A1 (de) * | 1984-05-25 | 1986-01-02 | Thomson-Csf | Metallisierungsstruktur zur Kontaktherstellung für eine Halbleitervorrichtung und Vorrichtung mit einer solchen Struktur |
FR2565030A1 (fr) * | 1984-05-25 | 1985-11-29 | Thomson Csf | Structure de metallisations de reprise de contacts d'un dispositif semi-conducteur et dispositif dote d'une telle structure |
US4970578A (en) * | 1987-05-01 | 1990-11-13 | Raytheon Company | Selective backside plating of GaAs monolithic microwave integrated circuits |
WO1988009057A1 (en) * | 1987-05-14 | 1988-11-17 | Hughes Aircraft Company | Two-terminal semiconductor diode arrangement |
EP0293630A1 (de) * | 1987-06-04 | 1988-12-07 | Licentia Patent-Verwaltungs-GmbH | Halbleiterkörper mit Wärmesenke |
US4910583A (en) * | 1987-06-04 | 1990-03-20 | Licentia Patent-Verwaltungs Gmbh | Semiconductor body with heat sink |
US5051811A (en) * | 1987-08-31 | 1991-09-24 | Texas Instruments Incorporated | Solder or brazing barrier |
EP0362161A2 (de) * | 1988-09-29 | 1990-04-04 | Microwave Power, Inc. | Verfahren zum Herstellen eines Substrates für integrierte Mikrowellen-Schaltungen |
EP0362161A3 (de) * | 1988-09-29 | 1990-09-19 | Microwave Power, Inc. | Verfahren zum Herstellen eines Substrates für integrierte Mikrowellen-Schaltungen |
EP0376100A3 (de) * | 1988-12-24 | 1991-07-31 | Alcatel SEL Aktiengesellschaft | Verfahren und Leiterplatte zum Montieren eines Halbleiter-Bauelements |
EP0376100A2 (de) * | 1988-12-24 | 1990-07-04 | Alcatel SEL Aktiengesellschaft | Verfahren und Leiterplatte zum Montieren eines Halbleiter-Bauelements |
GB2274200A (en) * | 1991-10-29 | 1994-07-13 | Gen Electric | A High density interconnect structure including a spacer structure and a gap |
GB2274200B (en) * | 1991-10-29 | 1996-03-20 | Gen Electric | A high density interconnect structure including a spacer structure and a gap |
US5449929A (en) * | 1992-12-21 | 1995-09-12 | Mitsubishi Denki Kabushiki Kaisha | IPG transistor semiconductor integrated circuit device |
US5703405A (en) * | 1993-03-15 | 1997-12-30 | Motorola, Inc. | Integrated circuit chip formed from processing two opposing surfaces of a wafer |
WO1996013062A1 (en) * | 1994-10-19 | 1996-05-02 | Ceram Incorporated | Apparatus and method of manufacturing stacked wafer array |
US6710410B2 (en) * | 1997-01-18 | 2004-03-23 | Semiconductor Energy Laboratory Co., Ltd. | Hybrid circuit and electronic device using same |
US6515334B2 (en) * | 1997-01-18 | 2003-02-04 | Semiconductor Energy Laboratory Co., Ltd. | Hybrid circuit and electronic device using same |
US7154148B2 (en) | 1997-01-18 | 2006-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Hybrid circuit and electronic device using same |
US7619282B2 (en) | 1997-01-18 | 2009-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Hybrid circuit and electronic device using same |
WO2000048248A1 (en) * | 1999-02-10 | 2000-08-17 | Telefonaktiebolaget Lm Ericsson (Publ) | Semiconductor device with deep substrate contacts |
US6953981B1 (en) | 1999-02-10 | 2005-10-11 | Telefonaktiebolaget Lm Ericsson (Publ) | Semiconductor device with deep substrates contacts |
EP1693891A2 (de) * | 2005-01-31 | 2006-08-23 | Interuniversitair Micro-Elektronica Centrum (IMEC) | Verfahren zur Herstellung einer Halbleiteranordnung |
EP1693891A3 (de) * | 2005-01-31 | 2008-03-05 | Interuniversitair Micro-Elektronica Centrum (IMEC) | Verfahren zur Herstellung einer Halbleiteranordnung |
US7442635B2 (en) | 2005-01-31 | 2008-10-28 | Interuniversitair Microelektronica Centrum (Imec) | Method for producing a semiconductor device and resulting device |
US7759701B2 (en) | 2005-01-31 | 2010-07-20 | Imec | Semiconductor device having interconnected contact groups |
CN107980171A (zh) * | 2016-12-23 | 2018-05-01 | 苏州能讯高能半导体有限公司 | 半导体芯片、半导体晶圆及半导体晶圆的制造方法 |
CN107980171B (zh) * | 2016-12-23 | 2022-06-24 | 苏州能讯高能半导体有限公司 | 半导体芯片、半导体晶圆及半导体晶圆的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
DE3013196A1 (de) | 1980-10-30 |
FR2454185A1 (fr) | 1980-11-07 |
JPS55140272A (en) | 1980-11-01 |
IT8048031A0 (it) | 1980-02-28 |
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