JPS55128824A - Method of diffusing heavy metal into semiconductor - Google Patents
Method of diffusing heavy metal into semiconductorInfo
- Publication number
- JPS55128824A JPS55128824A JP3558079A JP3558079A JPS55128824A JP S55128824 A JPS55128824 A JP S55128824A JP 3558079 A JP3558079 A JP 3558079A JP 3558079 A JP3558079 A JP 3558079A JP S55128824 A JPS55128824 A JP S55128824A
- Authority
- JP
- Japan
- Prior art keywords
- diode
- wafer
- heavy metal
- furnace
- tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Thyristors (AREA)
Abstract
PURPOSE: To dispense with cooling on the way of operation and enable quenching, by placing a substance of high heat capcity around an Si wafer to which a heavy metal is caused to adhere and by setting the wafer and the substance in a furnace, diffusing the heavy metal into the wafer, moving them to an end of the furnace and then picking out only the wafer.
CONSTITUTION: A p-type diffusion layer is provided on an Si wafer of the n-type or the like so that a diode is manufactured. A heavy metal such as Au, which becomes a lifetime killer, is coated on the obverse and reverse sides of the diode under vacuum. The diode is then put in an Si tube of high heat capcity. The Si tube is inserted into a diffusing furnace already set at a prescribed temperature. The tube is maintained in the furnace for a prescribed time to diffuse the heavy metal into the diode. After that, the Si tube containing the diode is moved to an end of the furnace. Then, only the diode is picked out, put on a stainless steel plate and quenched. According to this method, the temperature of the diode does not slowly fall after the diffusion. Therefore, the quenching is enabled and the scattering in the concentration of the heavy metal in the wafer or a lot is greatly reduced.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3558079A JPS55128824A (en) | 1979-03-28 | 1979-03-28 | Method of diffusing heavy metal into semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3558079A JPS55128824A (en) | 1979-03-28 | 1979-03-28 | Method of diffusing heavy metal into semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55128824A true JPS55128824A (en) | 1980-10-06 |
Family
ID=12445699
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3558079A Pending JPS55128824A (en) | 1979-03-28 | 1979-03-28 | Method of diffusing heavy metal into semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55128824A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017055098A (en) * | 2015-09-07 | 2017-03-16 | 国立大学法人大阪大学 | Manufacturing method for semiconductor device and semiconductor manufacturing device for use therein |
| US10755920B2 (en) | 2015-09-07 | 2020-08-25 | Fuji Electric Co., Ltd. | Method for manufacturing semiconductor device and semiconductor manufacturing apparatus used for the method |
-
1979
- 1979-03-28 JP JP3558079A patent/JPS55128824A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017055098A (en) * | 2015-09-07 | 2017-03-16 | 国立大学法人大阪大学 | Manufacturing method for semiconductor device and semiconductor manufacturing device for use therein |
| US10755920B2 (en) | 2015-09-07 | 2020-08-25 | Fuji Electric Co., Ltd. | Method for manufacturing semiconductor device and semiconductor manufacturing apparatus used for the method |
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