JPS5512713A - Silicone gate mos semiconductor device - Google Patents

Silicone gate mos semiconductor device

Info

Publication number
JPS5512713A
JPS5512713A JP8407278A JP8407278A JPS5512713A JP S5512713 A JPS5512713 A JP S5512713A JP 8407278 A JP8407278 A JP 8407278A JP 8407278 A JP8407278 A JP 8407278A JP S5512713 A JPS5512713 A JP S5512713A
Authority
JP
Japan
Prior art keywords
layer
polysilicone
doped
resistor
silicone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8407278A
Other languages
Japanese (ja)
Inventor
Takeo Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8407278A priority Critical patent/JPS5512713A/en
Publication of JPS5512713A publication Critical patent/JPS5512713A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To improve heat radiation from a resistor layer in a protective circuit by forming the resistor in the input protective circuit by a doped polysilicone layer in which an undoped silicone layer is used as a polysilicone layer. CONSTITUTION:A resistor layer 32 that is made of a polysilicone doped by P<+> or N<+> is in closely contact with a polysilicone layer 42 that consists of (a); an undoped polysilicone layer, (b); a low density doped polysilicone layer that is the same conductive or opposite conductive type to a doped polysilicone layer in the resistor layer, and (c); a high density doped silicone layer that is oppodite conductive type to the doped polysilicone layer in the resistor layer. Then the first SiO2 layer 33 is cobered on a silicone substrate for instance, and one end of the resistor layer 32 is connected to an input terminal pad 34 and the other end, to 2 pad 44 used for an input protective diode and a gate of MOSIC. Then the second SiO2 layer 43 is covered.
JP8407278A 1978-07-12 1978-07-12 Silicone gate mos semiconductor device Pending JPS5512713A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8407278A JPS5512713A (en) 1978-07-12 1978-07-12 Silicone gate mos semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8407278A JPS5512713A (en) 1978-07-12 1978-07-12 Silicone gate mos semiconductor device

Publications (1)

Publication Number Publication Date
JPS5512713A true JPS5512713A (en) 1980-01-29

Family

ID=13820276

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8407278A Pending JPS5512713A (en) 1978-07-12 1978-07-12 Silicone gate mos semiconductor device

Country Status (1)

Country Link
JP (1) JPS5512713A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5024229A (en) * 1973-06-30 1975-03-15

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5024229A (en) * 1973-06-30 1975-03-15

Similar Documents

Publication Publication Date Title
JPS5230388A (en) Semiconductor integrated circuit device constructed with insulating ga te field effect transistor
JPS5710992A (en) Semiconductor device and manufacture therefor
JPS52101967A (en) Semiconductor device
JPS56162875A (en) Semiconductor device
JPS5550675A (en) Semiconductor device
JPS5512713A (en) Silicone gate mos semiconductor device
JPS5724563A (en) Semiconductor device
JPS547864A (en) Manufacture for semiconductor device
JPS54136279A (en) Semiconductor device
JPS5257789A (en) Photo coupled semiconductor device
JPS5441666A (en) Semiconductor integrated circuit element
JPS5339088A (en) Insulated gate type field effect semiconductor device
JPS52122090A (en) Semiconductor integrated circuit device
JPS55151359A (en) Semiconductor device
JPS539484A (en) Integrated circuit device
JPS52135273A (en) Mos type semiconductor device
JPS5367388A (en) Memory semiconductor device
JPS52133762A (en) Complementary type field effect semiconductor in tegrated circuit device
JPS51150282A (en) Semiconductor device and manufacturing method thereof
JPS53120288A (en) Constant voltage semiconductor device
JPS52119190A (en) Semiconductor integration circuit
JPS52147083A (en) Semiconductor devices and integrated circuit using the same
JPS5320875A (en) Semiconductor integrated circuit device
JPS5360170A (en) Input/output pads of ic chip
JPS539483A (en) Semiconductor device