JPS55127056A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS55127056A JPS55127056A JP3443879A JP3443879A JPS55127056A JP S55127056 A JPS55127056 A JP S55127056A JP 3443879 A JP3443879 A JP 3443879A JP 3443879 A JP3443879 A JP 3443879A JP S55127056 A JPS55127056 A JP S55127056A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- sbd
- film
- integrated circuit
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000010410 layer Substances 0.000 abstract 6
- 230000003247 decreasing effect Effects 0.000 abstract 2
- 230000010354 integration Effects 0.000 abstract 2
- 238000002955 isolation Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000004888 barrier function Effects 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000006023 eutectic alloy Substances 0.000 abstract 1
- 238000000605 extraction Methods 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
- 238000007747 plating Methods 0.000 abstract 1
- 238000005245 sintering Methods 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0814—Diodes only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To improve integration and function of a integrated circuit using a multitude of Schottky barrier diodes (SBD) by forming a plural piece of p-type SBD on a substrate the surface layer of which is p-type. CONSTITUTION:An n<-> epitaxial layer 11 is provided on a p<-> Si substrate 9 through an n<+> buried layer 10 and isolated by a p<+> layer 12, and an n<+> extracted layer 13 is connected to the buried layer. An opening is provided in an oxidized film 14 on the surface and after plating with a Pt film 15, an eutectic alloy 16 is made through sintering. The Pt on the film 14 is removed, W 17 and Ti 18 are laminated, Al is further placed thereon and from forming an electrode 19 through photoetching, there is formed an n<+>-type SBD. According to this constitution, an isolation at every SBD is not required, a p<+> extraction on anode side can be performed in common by the layer 13, an occupied area is decreased to 30 through 50%, thus improving integration. Then, a formation of extra pn-junction for isolation is not necessary, and a parasitic capacity is decreased to improve operational speed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3443879A JPS55127056A (en) | 1979-03-26 | 1979-03-26 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3443879A JPS55127056A (en) | 1979-03-26 | 1979-03-26 | Semiconductor integrated circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55127056A true JPS55127056A (en) | 1980-10-01 |
Family
ID=12414221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3443879A Pending JPS55127056A (en) | 1979-03-26 | 1979-03-26 | Semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55127056A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61214466A (en) * | 1985-03-19 | 1986-09-24 | Sanyo Electric Co Ltd | Semiconductor device |
| EP0899794A2 (en) * | 1997-08-27 | 1999-03-03 | Siemens Aktiengesellschaft | High frequency diode and method for fabricating it |
-
1979
- 1979-03-26 JP JP3443879A patent/JPS55127056A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61214466A (en) * | 1985-03-19 | 1986-09-24 | Sanyo Electric Co Ltd | Semiconductor device |
| EP0899794A2 (en) * | 1997-08-27 | 1999-03-03 | Siemens Aktiengesellschaft | High frequency diode and method for fabricating it |
| EP0899794A3 (en) * | 1997-08-27 | 1999-11-03 | Siemens Aktiengesellschaft | High frequency diode and method for fabricating it |
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