JPS6441266A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS6441266A
JPS6441266A JP19778387A JP19778387A JPS6441266A JP S6441266 A JPS6441266 A JP S6441266A JP 19778387 A JP19778387 A JP 19778387A JP 19778387 A JP19778387 A JP 19778387A JP S6441266 A JPS6441266 A JP S6441266A
Authority
JP
Japan
Prior art keywords
film
oxide film
silicon
electrode
10angstrom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19778387A
Other languages
Japanese (ja)
Inventor
Tsutomu Tashiro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP19778387A priority Critical patent/JPS6441266A/en
Publication of JPS6441266A publication Critical patent/JPS6441266A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To restrain the generation of silicon nodule even in the case where a contact part is fine and a junction is shallow, by forming a thin oxide film of 5-10Angstrom thick between a silicon substrate and a metal electrode film containing silicon. CONSTITUTION:In a P-type silicon substrate 1, an N-type islandtype diffusion layer 2 is selectively formed, and further, an Al-Si film 5 composed of a mask oxide film 3 and Al-Si alloy is. stacked and formed. An electrode is formed, by burying the Al-Si film 5 in a contact hole 4 of the mask oxide film 3. A boundary surface oxide film 6 of 5-10Angstrom thick is arranged between the electrode Al-Si film 6 and the diffusion layer 2. Since the oxide film 6 is interposed in the contact part in this manner, the silicon surface of a base is not exposed. Therefore, even if Si is deposited from a metal electrode by contact type heat- treating, solid phase epitaxial growth of Si from the substrate 1 due to this deposited silicon does not occur.
JP19778387A 1987-08-07 1987-08-07 Semiconductor integrated circuit device Pending JPS6441266A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19778387A JPS6441266A (en) 1987-08-07 1987-08-07 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19778387A JPS6441266A (en) 1987-08-07 1987-08-07 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS6441266A true JPS6441266A (en) 1989-02-13

Family

ID=16380277

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19778387A Pending JPS6441266A (en) 1987-08-07 1987-08-07 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS6441266A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008034730A (en) * 2006-07-31 2008-02-14 Mitsumi Electric Co Ltd Manufacturing method of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008034730A (en) * 2006-07-31 2008-02-14 Mitsumi Electric Co Ltd Manufacturing method of semiconductor device

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