JPS6441266A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS6441266A JPS6441266A JP19778387A JP19778387A JPS6441266A JP S6441266 A JPS6441266 A JP S6441266A JP 19778387 A JP19778387 A JP 19778387A JP 19778387 A JP19778387 A JP 19778387A JP S6441266 A JPS6441266 A JP S6441266A
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide film
- silicon
- electrode
- 10angstrom
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To restrain the generation of silicon nodule even in the case where a contact part is fine and a junction is shallow, by forming a thin oxide film of 5-10Angstrom thick between a silicon substrate and a metal electrode film containing silicon. CONSTITUTION:In a P-type silicon substrate 1, an N-type islandtype diffusion layer 2 is selectively formed, and further, an Al-Si film 5 composed of a mask oxide film 3 and Al-Si alloy is. stacked and formed. An electrode is formed, by burying the Al-Si film 5 in a contact hole 4 of the mask oxide film 3. A boundary surface oxide film 6 of 5-10Angstrom thick is arranged between the electrode Al-Si film 6 and the diffusion layer 2. Since the oxide film 6 is interposed in the contact part in this manner, the silicon surface of a base is not exposed. Therefore, even if Si is deposited from a metal electrode by contact type heat- treating, solid phase epitaxial growth of Si from the substrate 1 due to this deposited silicon does not occur.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19778387A JPS6441266A (en) | 1987-08-07 | 1987-08-07 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19778387A JPS6441266A (en) | 1987-08-07 | 1987-08-07 | Semiconductor integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6441266A true JPS6441266A (en) | 1989-02-13 |
Family
ID=16380277
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19778387A Pending JPS6441266A (en) | 1987-08-07 | 1987-08-07 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6441266A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008034730A (en) * | 2006-07-31 | 2008-02-14 | Mitsumi Electric Co Ltd | Manufacturing method of semiconductor device |
-
1987
- 1987-08-07 JP JP19778387A patent/JPS6441266A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008034730A (en) * | 2006-07-31 | 2008-02-14 | Mitsumi Electric Co Ltd | Manufacturing method of semiconductor device |
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