JPS55125625A - Diffusion of impurity - Google Patents

Diffusion of impurity

Info

Publication number
JPS55125625A
JPS55125625A JP3450279A JP3450279A JPS55125625A JP S55125625 A JPS55125625 A JP S55125625A JP 3450279 A JP3450279 A JP 3450279A JP 3450279 A JP3450279 A JP 3450279A JP S55125625 A JPS55125625 A JP S55125625A
Authority
JP
Japan
Prior art keywords
diffusion
furnace
shall
ratio
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3450279A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6335092B2 (enExample
Inventor
Toru Suganuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3450279A priority Critical patent/JPS55125625A/ja
Publication of JPS55125625A publication Critical patent/JPS55125625A/ja
Publication of JPS6335092B2 publication Critical patent/JPS6335092B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP3450279A 1979-03-23 1979-03-23 Diffusion of impurity Granted JPS55125625A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3450279A JPS55125625A (en) 1979-03-23 1979-03-23 Diffusion of impurity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3450279A JPS55125625A (en) 1979-03-23 1979-03-23 Diffusion of impurity

Publications (2)

Publication Number Publication Date
JPS55125625A true JPS55125625A (en) 1980-09-27
JPS6335092B2 JPS6335092B2 (enExample) 1988-07-13

Family

ID=12416022

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3450279A Granted JPS55125625A (en) 1979-03-23 1979-03-23 Diffusion of impurity

Country Status (1)

Country Link
JP (1) JPS55125625A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57132358A (en) * 1981-02-09 1982-08-16 Fujitsu Ltd Manufacture of semiconductor device
JPS60117666A (ja) * 1983-11-30 1985-06-25 Toshiba Corp サイリスタ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57132358A (en) * 1981-02-09 1982-08-16 Fujitsu Ltd Manufacture of semiconductor device
JPS60117666A (ja) * 1983-11-30 1985-06-25 Toshiba Corp サイリスタ

Also Published As

Publication number Publication date
JPS6335092B2 (enExample) 1988-07-13

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