JPS55121650A - Cvd device - Google Patents
Cvd deviceInfo
- Publication number
- JPS55121650A JPS55121650A JP2962079A JP2962079A JPS55121650A JP S55121650 A JPS55121650 A JP S55121650A JP 2962079 A JP2962079 A JP 2962079A JP 2962079 A JP2962079 A JP 2962079A JP S55121650 A JPS55121650 A JP S55121650A
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- nozzle
- passages
- prevent
- stock gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2962079A JPS55121650A (en) | 1979-03-14 | 1979-03-14 | Cvd device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2962079A JPS55121650A (en) | 1979-03-14 | 1979-03-14 | Cvd device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55121650A true JPS55121650A (en) | 1980-09-18 |
Family
ID=12281120
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2962079A Pending JPS55121650A (en) | 1979-03-14 | 1979-03-14 | Cvd device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55121650A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58193631U (ja) * | 1982-06-17 | 1983-12-23 | 日本電気ホームエレクトロニクス株式会社 | 半導体製造装置 |
JPS615515A (ja) * | 1984-06-07 | 1986-01-11 | Fujitsu Ltd | 化学気相成長装置 |
JPS61158947U (ja) * | 1985-03-26 | 1986-10-02 | ||
WO1993006619A1 (en) * | 1991-09-27 | 1993-04-01 | Komatsu Electronic Metals Co., Ltd. | Apparatus for introducing gas, and apparatus and method for epitaxial growth |
-
1979
- 1979-03-14 JP JP2962079A patent/JPS55121650A/ja active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58193631U (ja) * | 1982-06-17 | 1983-12-23 | 日本電気ホームエレクトロニクス株式会社 | 半導体製造装置 |
JPS615515A (ja) * | 1984-06-07 | 1986-01-11 | Fujitsu Ltd | 化学気相成長装置 |
JPS61158947U (ja) * | 1985-03-26 | 1986-10-02 | ||
JPH0530351Y2 (ja) * | 1985-03-26 | 1993-08-03 | ||
WO1993006619A1 (en) * | 1991-09-27 | 1993-04-01 | Komatsu Electronic Metals Co., Ltd. | Apparatus for introducing gas, and apparatus and method for epitaxial growth |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100215376B1 (ko) | 표면감수성이감소된오존/테트라에톡시실란산화규소막의증착방법 | |
KR100257302B1 (ko) | 성막방법 | |
US4834020A (en) | Atmospheric pressure chemical vapor deposition apparatus | |
US4279947A (en) | Deposition of silicon nitride | |
KR880003403A (ko) | 화학적 기상 성장법과 그장치 | |
JP2760717B2 (ja) | 半導体デバイスの製造方法 | |
KR940018918A (ko) | 증착시 폴리실리콘 필름의 균일성을 개선하는 방법 및 장치 | |
KR950007077A (ko) | 박막의 제조방법 및 제조장치 | |
KR920001620A (ko) | 반도체장치 및 그의 제조방법 | |
KR950020993A (ko) | 반도체 제조장치 | |
KR970706960A (ko) | 유리 피복 방법 및 이에 의해 피복된 유리(Glass Coating Method and Glass Coated Thereby) | |
JPS6461376A (en) | Component member for semiconductor production | |
EP0164928A3 (en) | Vertical hot wall cvd reactor | |
JPS55121650A (en) | Cvd device | |
JPS55125681A (en) | Manufacture of photovoltaic device | |
US3389022A (en) | Method for producing silicon carbide layers on silicon substrates | |
JPH04370924A (ja) | Cvd装置 | |
JPS55121648A (en) | Cvd device | |
TW259890B (en) | Semiconductor device and process thereof | |
JPS6412522A (en) | Semiconductor crystal epitaxy method | |
JP3804913B2 (ja) | 半導体装置の製造方法および半導体装置の製造装置 | |
JPS5748249A (en) | Semiconductor device | |
US4615909A (en) | Method of manufacturing semiconductor devices, in which material is deposited from a reaction gas, and apparatus for carrying out such a method | |
JPS6383275A (ja) | 被処理体の処理方法 | |
JPS6010108B2 (ja) | 窒化珪素を基体上に熱分解堆積する方法 |