JPS55118621A - Method of manufacturing dielectric layer of glow polumer on substrate - Google Patents

Method of manufacturing dielectric layer of glow polumer on substrate

Info

Publication number
JPS55118621A
JPS55118621A JP2394880A JP2394880A JPS55118621A JP S55118621 A JPS55118621 A JP S55118621A JP 2394880 A JP2394880 A JP 2394880A JP 2394880 A JP2394880 A JP 2394880A JP S55118621 A JPS55118621 A JP S55118621A
Authority
JP
Japan
Prior art keywords
polumer
glow
substrate
dielectric layer
manufacturing dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2394880A
Other languages
English (en)
Japanese (ja)
Other versions
JPS631736B2 (enExample
Inventor
Bakoniiku Horusuto
Zeebatsuhiaa Geruharuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS55118621A publication Critical patent/JPS55118621A/ja
Publication of JPS631736B2 publication Critical patent/JPS631736B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/62—Plasma-deposition of organic layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/30—Drying; Impregnating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/20—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances liquids, e.g. oils
    • H01B3/24—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances liquids, e.g. oils containing halogen in the molecules, e.g. halogenated oils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/44—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/14—Organic dielectrics
    • H01G4/145—Organic dielectrics vapour deposited
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Organic Insulating Materials (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Laminated Bodies (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2394880A 1979-02-28 1980-02-27 Method of manufacturing dielectric layer of glow polumer on substrate Granted JPS55118621A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2907775A DE2907775C2 (de) 1979-02-28 1979-02-28 Verfahren zur Herstellung von Dielektrikumsschichten durch Polymerisation von Gasen mittels Glimmentladung auf einem Substrat und deren Verwendung

Publications (2)

Publication Number Publication Date
JPS55118621A true JPS55118621A (en) 1980-09-11
JPS631736B2 JPS631736B2 (enExample) 1988-01-13

Family

ID=6064096

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2394880A Granted JPS55118621A (en) 1979-02-28 1980-02-27 Method of manufacturing dielectric layer of glow polumer on substrate

Country Status (4)

Country Link
JP (1) JPS55118621A (enExample)
DE (1) DE2907775C2 (enExample)
FR (1) FR2450499A1 (enExample)
GB (1) GB2045263B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4374179A (en) * 1980-12-18 1983-02-15 Honeywell Inc. Plasma polymerized ethane for interlayer dielectric
DE3531578A1 (de) * 1985-09-04 1987-03-05 Siemens Ag Verfahren zum herstellen von dielektrikumsschichten durch polymerisation von gasen
JP3035141U (ja) * 1996-08-27 1997-03-11 株式会社東京セロレーベル 封 筒

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3252830A (en) * 1958-03-05 1966-05-24 Gen Electric Electric capacitor and method for making the same
GB1170502A (en) * 1966-03-01 1969-11-12 Gen Electric Photopolymerized Films
US3522226A (en) * 1966-03-01 1970-07-28 Gen Electric Polymerized hexachlorobutadiene
GB1291465A (en) * 1968-11-01 1972-10-04 Gen Electric Magnetic system components having a protective film thereon
DE2105003C3 (de) * 1971-02-03 1973-10-11 Siemens Ag, 1000 Berlin U. 8000 Muenchen Verfahren zum Überziehen von Kor pern mit isolierenden Stoffen
DE2302174C3 (de) * 1973-01-17 1979-08-30 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Beschichten von Körpern, insbesondere von Folien für elektrische Kondensatoren im Durchlaufverfahren und Vorrichtung zur Durchführung des Verfahrens
DE2557899C2 (de) * 1975-12-22 1979-12-06 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung dünner Dielektrikumsschichten durch Polymerisation von Gasen

Also Published As

Publication number Publication date
DE2907775A1 (de) 1980-09-04
JPS631736B2 (enExample) 1988-01-13
GB2045263B (en) 1983-01-12
DE2907775C2 (de) 1983-03-10
FR2450499A1 (fr) 1980-09-26
GB2045263A (en) 1980-10-29
FR2450499B1 (enExample) 1985-04-19

Similar Documents

Publication Publication Date Title
JPS53133236A (en) Method of forming multiicoating layers on substrate surface
HK31382A (en) Insulating substrate with metallic coating and method for manufacturing same
DE3064598D1 (en) Electrically insulating substrate and a method of making such a substrate
JPS5328266A (en) Method of producing multilayer ceramic substrate
JPS55103730A (en) Method of forming composite semiconductor substrate
JPS55107225A (en) Electric double layer capacitor and method of manufacturing same
JPS5342554A (en) Method of making layer provided with some structure on substrate
JPS55156388A (en) Method of forming electric path onto insulating substrate
JPS5693333A (en) Method of manufacturing insulating layer for covering one side surface of semiconductor
JPS5670623A (en) Method of manufacturing electric double layer capacitor
GB2047462B (en) Method of manufacturing thin film electroluminescent devices
JPS5351474A (en) Method of forming electrode on insulating substrate
JPS5512777A (en) Method of manufacturing ceramic substrate
JPS556836A (en) Method of manufacturing circuit substrate
JPS5621396A (en) Method of forming conductive passage on substrate
JPS5349264A (en) Method of producing multilayer ceramic substrate
JPS5626305A (en) Method of forming conductive coating
JPS5543838A (en) Method of forming conductive layer
JPS5583286A (en) Method of forming conductive layer
JPS5335394A (en) Method of forming solid state layer on substrate
JPS55123196A (en) Method of manufacturing ceramic multilayer circuit substrate
JPS556820A (en) Method of manufacturing ceramic substrate
JPS5723416A (en) Method of forming pattern of insulating substrate
JPS5676592A (en) Method of forming metallic layer pattern
JPS5347957A (en) Method of manufacturing ceramic substrate