FR2450499A1 - Procede pour preparer, sur un substrat, des couches de dielectrique en polymerisat obtenu par decharge a effluves, et utilisation de ces couches comme substrat - Google Patents

Procede pour preparer, sur un substrat, des couches de dielectrique en polymerisat obtenu par decharge a effluves, et utilisation de ces couches comme substrat

Info

Publication number
FR2450499A1
FR2450499A1 FR8003944A FR8003944A FR2450499A1 FR 2450499 A1 FR2450499 A1 FR 2450499A1 FR 8003944 A FR8003944 A FR 8003944A FR 8003944 A FR8003944 A FR 8003944A FR 2450499 A1 FR2450499 A1 FR 2450499A1
Authority
FR
France
Prior art keywords
substrate
discharge
polymerisate
preparing
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8003944A
Other languages
English (en)
Other versions
FR2450499B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2450499A1 publication Critical patent/FR2450499A1/fr
Application granted granted Critical
Publication of FR2450499B1 publication Critical patent/FR2450499B1/fr
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/62—Plasma-deposition of organic layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/30—Drying; Impregnating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/20—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances liquids, e.g. oils
    • H01B3/24—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances liquids, e.g. oils containing halogen in the molecules, e.g. halogenated oils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/44—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/14—Organic dielectrics
    • H01G4/145—Organic dielectrics vapour deposited
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Metallurgy (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Insulating Materials (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Laminated Bodies (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

L'INVENTION CONCERNE UN PROCEDE POUR FABRIQUER DES COUCHES DE DIELECTRIQUE CONSTITUEES PAR UN POLYMERISAT OBTENU PAR DECHARGE A EFFLUVES, SUR UN SUBSTRAT. SELON CE PROCEDE, ON INSUFFLE DES DIENES DE FORMULE BRUTE CH(2N-2), DANS L'ENCEINTE REACTIONNELLE. APPLICATION NOTAMMENT A LA FABRICATION DE DIELECTRIQUES DE CONDENSATEURS.
FR8003944A 1979-02-28 1980-02-22 Procede pour preparer, sur un substrat, des couches de dielectrique en polymerisat obtenu par decharge a effluves, et utilisation de ces couches comme substrat Granted FR2450499A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19792907775 DE2907775C2 (de) 1979-02-28 1979-02-28 Verfahren zur Herstellung von Dielektrikumsschichten durch Polymerisation von Gasen mittels Glimmentladung auf einem Substrat und deren Verwendung

Publications (2)

Publication Number Publication Date
FR2450499A1 true FR2450499A1 (fr) 1980-09-26
FR2450499B1 FR2450499B1 (fr) 1985-04-19

Family

ID=6064096

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8003944A Granted FR2450499A1 (fr) 1979-02-28 1980-02-22 Procede pour preparer, sur un substrat, des couches de dielectrique en polymerisat obtenu par decharge a effluves, et utilisation de ces couches comme substrat

Country Status (4)

Country Link
JP (1) JPS55118621A (fr)
DE (1) DE2907775C2 (fr)
FR (1) FR2450499A1 (fr)
GB (1) GB2045263B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2496988A1 (fr) * 1980-12-18 1982-06-25 Honeywell Inc Dispositifs electroniques en couche mince comprenant un film dielectrique utilise comme dielectrique entre couche

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3531578A1 (de) * 1985-09-04 1987-03-05 Siemens Ag Verfahren zum herstellen von dielektrikumsschichten durch polymerisation von gasen
JP3035141U (ja) * 1996-08-27 1997-03-11 株式会社東京セロレーベル 封 筒

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1119735A (en) * 1966-03-01 1968-07-10 Gen Electric Photopolymerized films
GB1170502A (en) * 1966-03-01 1969-11-12 Gen Electric Photopolymerized Films
NL7118066A (fr) * 1971-02-03 1972-08-07
GB1291465A (en) * 1968-11-01 1972-10-04 Gen Electric Magnetic system components having a protective film thereon
DE2557899B1 (de) * 1975-12-22 1977-03-31 Siemens Ag Verfahren zur Herstellung duenner Dielektrikumsschichten durch Polymerisation von Gasen

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3252830A (en) * 1958-03-05 1966-05-24 Gen Electric Electric capacitor and method for making the same
DE2302174C3 (de) * 1973-01-17 1979-08-30 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Beschichten von Körpern, insbesondere von Folien für elektrische Kondensatoren im Durchlaufverfahren und Vorrichtung zur Durchführung des Verfahrens

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1119735A (en) * 1966-03-01 1968-07-10 Gen Electric Photopolymerized films
GB1170502A (en) * 1966-03-01 1969-11-12 Gen Electric Photopolymerized Films
GB1291465A (en) * 1968-11-01 1972-10-04 Gen Electric Magnetic system components having a protective film thereon
NL7118066A (fr) * 1971-02-03 1972-08-07
DE2557899B1 (de) * 1975-12-22 1977-03-31 Siemens Ag Verfahren zur Herstellung duenner Dielektrikumsschichten durch Polymerisation von Gasen

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2496988A1 (fr) * 1980-12-18 1982-06-25 Honeywell Inc Dispositifs electroniques en couche mince comprenant un film dielectrique utilise comme dielectrique entre couche

Also Published As

Publication number Publication date
JPS55118621A (en) 1980-09-11
FR2450499B1 (fr) 1985-04-19
DE2907775A1 (de) 1980-09-04
GB2045263A (en) 1980-10-29
GB2045263B (en) 1983-01-12
DE2907775C2 (de) 1983-03-10
JPS631736B2 (fr) 1988-01-13

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