JPS55117285A - Light drive semiconductor device - Google Patents
Light drive semiconductor deviceInfo
- Publication number
- JPS55117285A JPS55117285A JP2319579A JP2319579A JPS55117285A JP S55117285 A JPS55117285 A JP S55117285A JP 2319579 A JP2319579 A JP 2319579A JP 2319579 A JP2319579 A JP 2319579A JP S55117285 A JPS55117285 A JP S55117285A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- light guide
- semiconductor device
- hole
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- 230000008646 thermal stress Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor
- H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor the device being a photothyristor
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2319579A JPS55117285A (en) | 1979-02-28 | 1979-02-28 | Light drive semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2319579A JPS55117285A (en) | 1979-02-28 | 1979-02-28 | Light drive semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55117285A true JPS55117285A (en) | 1980-09-09 |
JPS6148787B2 JPS6148787B2 (ja) | 1986-10-25 |
Family
ID=12103879
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2319579A Granted JPS55117285A (en) | 1979-02-28 | 1979-02-28 | Light drive semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55117285A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58157161A (ja) * | 1982-03-12 | 1983-09-19 | Toshiba Corp | 光駆動型半導体装置 |
JPS59132165A (ja) * | 1983-01-18 | 1984-07-30 | Hitachi Ltd | 半導体装置 |
JPS60198860A (ja) * | 1984-03-23 | 1985-10-08 | Mitsubishi Electric Corp | 光半導体装置 |
JPS61239665A (ja) * | 1985-04-12 | 1986-10-24 | シ−メンス、アクチエンゲゼルシヤフト | 光点弧可能なサイリスタ |
-
1979
- 1979-02-28 JP JP2319579A patent/JPS55117285A/ja active Granted
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58157161A (ja) * | 1982-03-12 | 1983-09-19 | Toshiba Corp | 光駆動型半導体装置 |
JPS59132165A (ja) * | 1983-01-18 | 1984-07-30 | Hitachi Ltd | 半導体装置 |
JPH027192B2 (ja) * | 1983-01-18 | 1990-02-15 | Hitachi Ltd | |
JPS60198860A (ja) * | 1984-03-23 | 1985-10-08 | Mitsubishi Electric Corp | 光半導体装置 |
JPS61239665A (ja) * | 1985-04-12 | 1986-10-24 | シ−メンス、アクチエンゲゼルシヤフト | 光点弧可能なサイリスタ |
US4757366A (en) * | 1985-04-12 | 1988-07-12 | Siemens Aktiengesellschaft | Light-triggerable thyristor having low-loss feed of the trigger energy |
Also Published As
Publication number | Publication date |
---|---|
JPS6148787B2 (ja) | 1986-10-25 |
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