JPS55113390A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS55113390A
JPS55113390A JP688580A JP688580A JPS55113390A JP S55113390 A JPS55113390 A JP S55113390A JP 688580 A JP688580 A JP 688580A JP 688580 A JP688580 A JP 688580A JP S55113390 A JPS55113390 A JP S55113390A
Authority
JP
Japan
Prior art keywords
laser
output
laser device
temperature
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP688580A
Other languages
Japanese (ja)
Inventor
Ryoichi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP688580A priority Critical patent/JPS55113390A/en
Publication of JPS55113390A publication Critical patent/JPS55113390A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02438—Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To eliminate the variation in the laser output of a semiconductor laser device due to the alteration in the temperature of the laser device by detecting the variation in the output light of the laser device and controlling the input of a thermoelectric cooling element for controlling the temperature of the laser device according to the detected output. CONSTITUTION:When a semiconductor laser element 1 oscillates, it irradiates laser lights 3, 4. The laser light 3 is utilized as a light source, and the laser light 4 irradiated to the light receiving surface of a photodetector 5 arranged in the vicinity of the element 1. After a signal proportional to the output 4 monitored by the photodetector 5 is amplified by an amplifier 6, it is compared with the standard value to change an electric current supplied from a power supply 7 to a thermoelectric cooling element 12 so as to approach the varied amount of the signal from the standard value to zero. Since the temperature control by the thermoelectric cooling element is rapid in response and has an advantage to lower or raise the environmental temperature according to the polarity of the current, this element 1 can retain the laser output constant even in the environment largely varying the environmetnal temperature.
JP688580A 1980-01-25 1980-01-25 Semiconductor laser device Pending JPS55113390A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP688580A JPS55113390A (en) 1980-01-25 1980-01-25 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP688580A JPS55113390A (en) 1980-01-25 1980-01-25 Semiconductor laser device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP13019473A Division JPS5081695A (en) 1973-11-21 1973-11-21

Related Child Applications (4)

Application Number Title Priority Date Filing Date
JP58200944A Division JPS59112678A (en) 1983-10-28 1983-10-28 Semiconductor laser device
JP20094183A Division JPS59112675A (en) 1983-10-28 1983-10-28 Semiconductor laser device
JP58200942A Division JPS59112676A (en) 1983-10-28 1983-10-28 Semiconductor laser device
JP58200943A Division JPS59112677A (en) 1983-10-28 1983-10-28 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS55113390A true JPS55113390A (en) 1980-09-01

Family

ID=11650681

Family Applications (1)

Application Number Title Priority Date Filing Date
JP688580A Pending JPS55113390A (en) 1980-01-25 1980-01-25 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS55113390A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57178349A (en) * 1981-04-20 1982-11-02 Burr Brown Res Corp High performance circuit module regulated at temperature and temperature regulating method
US4571728A (en) * 1982-04-09 1986-02-18 Olympus Optical Co., Ltd. Temperature control device for a semiconductor laser
JPH02124593U (en) * 1989-03-22 1990-10-15

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57178349A (en) * 1981-04-20 1982-11-02 Burr Brown Res Corp High performance circuit module regulated at temperature and temperature regulating method
JPS6322623B2 (en) * 1981-04-20 1988-05-12 Burr Brown Corp
US4571728A (en) * 1982-04-09 1986-02-18 Olympus Optical Co., Ltd. Temperature control device for a semiconductor laser
JPH02124593U (en) * 1989-03-22 1990-10-15

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