JPS55105244A - Electron beam resist - Google Patents

Electron beam resist

Info

Publication number
JPS55105244A
JPS55105244A JP1252279A JP1252279A JPS55105244A JP S55105244 A JPS55105244 A JP S55105244A JP 1252279 A JP1252279 A JP 1252279A JP 1252279 A JP1252279 A JP 1252279A JP S55105244 A JPS55105244 A JP S55105244A
Authority
JP
Japan
Prior art keywords
electron beam
resist
type polymer
low molecular
copolymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1252279A
Other languages
Japanese (ja)
Inventor
Hideo Kuniyoshi
Takateru Asano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Yakuhin Kogyo KK
Victor Company of Japan Ltd
Panasonic Holdings Corp
Original Assignee
Fuji Yakuhin Kogyo KK
Victor Company of Japan Ltd
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Yakuhin Kogyo KK, Victor Company of Japan Ltd, Matsushita Electric Industrial Co Ltd filed Critical Fuji Yakuhin Kogyo KK
Priority to JP1252279A priority Critical patent/JPS55105244A/en
Publication of JPS55105244A publication Critical patent/JPS55105244A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Manufacturing Optical Record Carriers (AREA)

Abstract

PURPOSE:To enhance the sensitivity of an electron beam resist for forming a minute pattern by making up a specified straight chain decomposition type polymer or a copolymer thereof as a component of the resist with two constituents of high and low molecular regions. CONSTITUTION:A straight chain decomposition type polymer represented by the formula (where each of R1 and R2 is a group other than hydrogen atom), e.g. alpha- cyanoacrylate type polymer or a copolymer thereof as component of an electron beam resist is made up so that a high molecular region of about 200000-2 millions in average MW and a low molecular region of 20000 or less become 5-50wt%. By this resist composition low molecular chains are present among high molecular chain in a resist film, and the solubility of an electron beam-irradiated portion in a developer is increased, thereby raising an irradiated portion to unirradiated portion solubility ratio, that is, relative sensitivity.
JP1252279A 1979-02-06 1979-02-06 Electron beam resist Pending JPS55105244A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1252279A JPS55105244A (en) 1979-02-06 1979-02-06 Electron beam resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1252279A JPS55105244A (en) 1979-02-06 1979-02-06 Electron beam resist

Publications (1)

Publication Number Publication Date
JPS55105244A true JPS55105244A (en) 1980-08-12

Family

ID=11807663

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1252279A Pending JPS55105244A (en) 1979-02-06 1979-02-06 Electron beam resist

Country Status (1)

Country Link
JP (1) JPS55105244A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4675273A (en) * 1986-02-10 1987-06-23 Loctite (Ireland) Limited Resists formed by vapor deposition of anionically polymerizable monomer
JPS62247356A (en) * 1986-02-10 1987-10-28 ロクタイト．（アイルランド）．リミテツド Manufacture of evaporation photoresist of anionic polymerizable monomer and product thereof
JPS63271254A (en) * 1986-12-29 1988-11-09 Toppan Printing Co Ltd Radiation sensitive positive type resist having high resolution
JPS63271251A (en) * 1986-12-29 1988-11-09 Toppan Printing Co Ltd Radiation sensitive resist having high sensitivity and resolution
JPS63271250A (en) * 1986-12-29 1988-11-09 Toppan Printing Co Ltd Positive type resist material having dry etching resistance
JPS63271253A (en) * 1986-12-29 1988-11-09 Toppan Printing Co Ltd Positive type radiation sensitive resist having high resolution
JPH01154146A (en) * 1987-12-11 1989-06-16 Toppan Printing Co Ltd Radiation sensitive resist having high sensitivity

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS524834A (en) * 1975-06-30 1977-01-14 Agency Of Ind Science & Technol Image formation method through electron beam and resisting agent compo sitions which are used for the methoi
JPS524833A (en) * 1975-06-30 1977-01-14 Agency Of Ind Science & Technol Manufacturing method of electron-beam exposure resist use high molecul ar materials
JPS5293493A (en) * 1976-02-02 1977-08-05 Agency Of Ind Science & Technol Preparation of macromolecular materials for electron beam resists
JPS52132678A (en) * 1976-04-28 1977-11-07 Fujitsu Ltd High-sensitive positive type electron beam formation
JPS52153671A (en) * 1976-06-16 1977-12-20 Matsushita Electric Ind Co Ltd Electron beam resist and its usage
JPS5441719A (en) * 1977-09-08 1979-04-03 Cho Lsi Gijutsu Kenkyu Kumiai Radiation sensitive material

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS524834A (en) * 1975-06-30 1977-01-14 Agency Of Ind Science & Technol Image formation method through electron beam and resisting agent compo sitions which are used for the methoi
JPS524833A (en) * 1975-06-30 1977-01-14 Agency Of Ind Science & Technol Manufacturing method of electron-beam exposure resist use high molecul ar materials
JPS5293493A (en) * 1976-02-02 1977-08-05 Agency Of Ind Science & Technol Preparation of macromolecular materials for electron beam resists
JPS52132678A (en) * 1976-04-28 1977-11-07 Fujitsu Ltd High-sensitive positive type electron beam formation
JPS52153671A (en) * 1976-06-16 1977-12-20 Matsushita Electric Ind Co Ltd Electron beam resist and its usage
JPS5441719A (en) * 1977-09-08 1979-04-03 Cho Lsi Gijutsu Kenkyu Kumiai Radiation sensitive material

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4675273A (en) * 1986-02-10 1987-06-23 Loctite (Ireland) Limited Resists formed by vapor deposition of anionically polymerizable monomer
JPS62247356A (en) * 1986-02-10 1987-10-28 ロクタイト．（アイルランド）．リミテツド Manufacture of evaporation photoresist of anionic polymerizable monomer and product thereof
JPS63271254A (en) * 1986-12-29 1988-11-09 Toppan Printing Co Ltd Radiation sensitive positive type resist having high resolution
JPS63271251A (en) * 1986-12-29 1988-11-09 Toppan Printing Co Ltd Radiation sensitive resist having high sensitivity and resolution
JPS63271250A (en) * 1986-12-29 1988-11-09 Toppan Printing Co Ltd Positive type resist material having dry etching resistance
JPS63271253A (en) * 1986-12-29 1988-11-09 Toppan Printing Co Ltd Positive type radiation sensitive resist having high resolution
JPH01154146A (en) * 1987-12-11 1989-06-16 Toppan Printing Co Ltd Radiation sensitive resist having high sensitivity

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