JPS55101945A - Mask for exposure - Google Patents

Mask for exposure

Info

Publication number
JPS55101945A
JPS55101945A JP925779A JP925779A JPS55101945A JP S55101945 A JPS55101945 A JP S55101945A JP 925779 A JP925779 A JP 925779A JP 925779 A JP925779 A JP 925779A JP S55101945 A JPS55101945 A JP S55101945A
Authority
JP
Japan
Prior art keywords
film
mask
wafer
thickness
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP925779A
Other languages
Japanese (ja)
Other versions
JPS6054671B2 (en
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP54009257A priority Critical patent/JPS6054671B2/en
Publication of JPS55101945A publication Critical patent/JPS55101945A/en
Publication of JPS6054671B2 publication Critical patent/JPS6054671B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To easily obtain a mask having superior heat resistance, chemical resistance and mechanical strength, esp. suitable for X-ray exposure, and free from a hindrance due to thermal expansion by using nitrogen boride and/or carbon boride. CONSTITUTION:On Si wafer 1 boron nitride (BN) or boron carbide (B4C) film 2 of about 0.2mu thickness is formed by a chemical vacuum deposition (CVD) method. About 1mu thick resist film 3 for patterning is then formed, and metal 4 such as Au or Si having high X-ray stopping power is vacuum-deposited on film 3 in a thickness of 0.2-1mu. By removing film 3 and film 4 on film 3 by lift-off, metal film pattern 4 is formed on BN or B4C film on wafer 1. Finally, substrate wafer 1 is back-etched up to film 2 to complete a mask. Thus, the mask is easily manufactured having high transmissiveness even to soft X-rays of relatively long wavelengths.
JP54009257A 1979-01-31 1979-01-31 exposure mask Expired JPS6054671B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54009257A JPS6054671B2 (en) 1979-01-31 1979-01-31 exposure mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54009257A JPS6054671B2 (en) 1979-01-31 1979-01-31 exposure mask

Publications (2)

Publication Number Publication Date
JPS55101945A true JPS55101945A (en) 1980-08-04
JPS6054671B2 JPS6054671B2 (en) 1985-11-30

Family

ID=11715357

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54009257A Expired JPS6054671B2 (en) 1979-01-31 1979-01-31 exposure mask

Country Status (1)

Country Link
JP (1) JPS6054671B2 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4530891A (en) * 1981-03-17 1985-07-23 Hoya Electronics Co., Ltd. Photo-mask blank for use in lithography including a modified chromium compound
JPS6167857A (en) * 1984-09-12 1986-04-08 Shuzo Hattori Production of masked substrate for x-ray lithography
EP0212713A2 (en) * 1985-08-02 1987-03-04 Micronix Corporation Process for manufacturing a mask for use in X-ray photolithography using a monolithic support and resulting structure
EP0260718A2 (en) * 1986-09-19 1988-03-23 Fujitsu Limited An X-ray-transparent membrane and its production method
EP0289249A2 (en) * 1987-05-01 1988-11-02 AT&T Corp. Device fabrication by X-ray lithography utilizing stable boron nitride mask
JP2007277831A (en) * 2006-04-03 2007-10-25 Ohbayashi Corp Soil cement wall and foundation structure
JP2007277830A (en) * 2006-04-03 2007-10-25 Ohbayashi Corp Core material, continuous underground wall, soil cement wall, continuous underground wall pile, soil cement wall pile, cast-in-place concrete pile, underground structure, and foundation structure of building

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4979176A (en) * 1972-12-04 1974-07-31
JPS52173A (en) * 1975-06-23 1977-01-05 Toshiba Corp X-ray etching mask
JPS5212002A (en) * 1975-06-30 1977-01-29 Ibm Method of high aspect ratio mask
JPS5319762A (en) * 1976-08-09 1978-02-23 Mitsubishi Electric Corp Mask device for x-ray exposure
JPS53143171A (en) * 1977-05-20 1978-12-13 Hitachi Ltd Mask for x-ray transfer

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4979176A (en) * 1972-12-04 1974-07-31
JPS52173A (en) * 1975-06-23 1977-01-05 Toshiba Corp X-ray etching mask
JPS5212002A (en) * 1975-06-30 1977-01-29 Ibm Method of high aspect ratio mask
JPS5319762A (en) * 1976-08-09 1978-02-23 Mitsubishi Electric Corp Mask device for x-ray exposure
JPS53143171A (en) * 1977-05-20 1978-12-13 Hitachi Ltd Mask for x-ray transfer

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4530891A (en) * 1981-03-17 1985-07-23 Hoya Electronics Co., Ltd. Photo-mask blank for use in lithography including a modified chromium compound
JPS6167857A (en) * 1984-09-12 1986-04-08 Shuzo Hattori Production of masked substrate for x-ray lithography
EP0212713A2 (en) * 1985-08-02 1987-03-04 Micronix Corporation Process for manufacturing a mask for use in X-ray photolithography using a monolithic support and resulting structure
EP0212713A3 (en) * 1985-08-02 1988-10-26 Micronix Corporation Process for manufacturing a mask for use in x-ray photolithography using a monolithic support and resulting structure
EP0260718A2 (en) * 1986-09-19 1988-03-23 Fujitsu Limited An X-ray-transparent membrane and its production method
EP0289249A2 (en) * 1987-05-01 1988-11-02 AT&T Corp. Device fabrication by X-ray lithography utilizing stable boron nitride mask
JP2007277831A (en) * 2006-04-03 2007-10-25 Ohbayashi Corp Soil cement wall and foundation structure
JP2007277830A (en) * 2006-04-03 2007-10-25 Ohbayashi Corp Core material, continuous underground wall, soil cement wall, continuous underground wall pile, soil cement wall pile, cast-in-place concrete pile, underground structure, and foundation structure of building

Also Published As

Publication number Publication date
JPS6054671B2 (en) 1985-11-30

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