JPS55101185A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS55101185A
JPS55101185A JP956579A JP956579A JPS55101185A JP S55101185 A JPS55101185 A JP S55101185A JP 956579 A JP956579 A JP 956579A JP 956579 A JP956579 A JP 956579A JP S55101185 A JPS55101185 A JP S55101185A
Authority
JP
Japan
Prior art keywords
write
read
becomes
memory device
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP956579A
Other languages
English (en)
Other versions
JPS638555B2 (ja
Inventor
Masahiko Yoshimoto
Kenji Anami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP956579A priority Critical patent/JPS55101185A/ja
Publication of JPS55101185A publication Critical patent/JPS55101185A/ja
Publication of JPS638555B2 publication Critical patent/JPS638555B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/418—Address circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
JP956579A 1979-01-29 1979-01-29 Semiconductor memory device Granted JPS55101185A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP956579A JPS55101185A (en) 1979-01-29 1979-01-29 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP956579A JPS55101185A (en) 1979-01-29 1979-01-29 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS55101185A true JPS55101185A (en) 1980-08-01
JPS638555B2 JPS638555B2 (ja) 1988-02-23

Family

ID=11723808

Family Applications (1)

Application Number Title Priority Date Filing Date
JP956579A Granted JPS55101185A (en) 1979-01-29 1979-01-29 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS55101185A (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0178914A2 (en) * 1984-10-16 1986-04-23 Mitsubishi Denki Kabushiki Kaisha A semiconductor memory device
EP0179651A2 (en) * 1984-10-22 1986-04-30 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device
EP0345065A2 (en) * 1988-06-01 1989-12-06 Sony Corporation Memories
JPH02265097A (ja) * 1989-04-06 1990-10-29 Sony Corp 半導体メモリ装置
JPH03125397A (ja) * 1989-10-11 1991-05-28 Kawasaki Steel Corp 論理定義用メモリ
EP0718847B1 (en) * 1994-12-22 2003-06-25 Cypress Semiconductor Corporation Single ended dual port memory cell
US7196684B2 (en) * 2002-01-11 2007-03-27 Texas Instruments Incorporated Spatial light modulator with charge-pump pixel cell

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0178914A2 (en) * 1984-10-16 1986-04-23 Mitsubishi Denki Kabushiki Kaisha A semiconductor memory device
EP0179651A2 (en) * 1984-10-22 1986-04-30 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device
EP0345065A2 (en) * 1988-06-01 1989-12-06 Sony Corporation Memories
JPH02265097A (ja) * 1989-04-06 1990-10-29 Sony Corp 半導体メモリ装置
JPH03125397A (ja) * 1989-10-11 1991-05-28 Kawasaki Steel Corp 論理定義用メモリ
EP0718847B1 (en) * 1994-12-22 2003-06-25 Cypress Semiconductor Corporation Single ended dual port memory cell
US7196684B2 (en) * 2002-01-11 2007-03-27 Texas Instruments Incorporated Spatial light modulator with charge-pump pixel cell

Also Published As

Publication number Publication date
JPS638555B2 (ja) 1988-02-23

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