JPS55101002A - Inspecting method for mirror face body - Google Patents

Inspecting method for mirror face body

Info

Publication number
JPS55101002A
JPS55101002A JP708979A JP708979A JPS55101002A JP S55101002 A JPS55101002 A JP S55101002A JP 708979 A JP708979 A JP 708979A JP 708979 A JP708979 A JP 708979A JP S55101002 A JPS55101002 A JP S55101002A
Authority
JP
Japan
Prior art keywords
mirror
inspected
strike
reflected
distribution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP708979A
Other languages
Japanese (ja)
Inventor
Akira Kanai
Hiroo Tochikubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP708979A priority Critical patent/JPS55101002A/en
Publication of JPS55101002A publication Critical patent/JPS55101002A/en
Pending legal-status Critical Current

Links

Landscapes

  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)

Abstract

PURPOSE: To inspect the mirror face quality of a plane mirror, wafer mirror face, etc., with high precision by measuring the distribution of reflected-light intensity by causing a diffused light ray from a spot light source to strike a mirror face to be inspected.
CONSTITUTION: To inspect mirror-face quality such as the reflection-coefficient distribution and flatness of a plane mirror, wafer mirror surface, etc., a diffused light ray from a spot light source is caused to strike mirror surface 3 to be inspected and the distribution of reflected-light intensity within the section of the reflected light ray is measured for the inspection. For example, diffused beams which never cross mutually are generated by pinholes 7 for spot light sources, halogen lamp 1a, and achromat condenser lenses 6a and 6b and then caused to strike silicon wafer mirror surface 3 to obtain inspection image 5. Then, inspection image 5 is inspected to judge a scratch, mirror-surface waviness, claw-track, flaw of the surface, etc. by a light and shade pattern with neither aberration nor strain.
COPYRIGHT: (C)1980,JPO&Japio
JP708979A 1979-01-26 1979-01-26 Inspecting method for mirror face body Pending JPS55101002A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP708979A JPS55101002A (en) 1979-01-26 1979-01-26 Inspecting method for mirror face body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP708979A JPS55101002A (en) 1979-01-26 1979-01-26 Inspecting method for mirror face body

Publications (1)

Publication Number Publication Date
JPS55101002A true JPS55101002A (en) 1980-08-01

Family

ID=11656346

Family Applications (1)

Application Number Title Priority Date Filing Date
JP708979A Pending JPS55101002A (en) 1979-01-26 1979-01-26 Inspecting method for mirror face body

Country Status (1)

Country Link
JP (1) JPS55101002A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57134612U (en) * 1981-02-17 1982-08-21
JPS5886408A (en) * 1981-11-18 1983-05-24 Matsushita Electric Ind Co Ltd Detector and extractor for surface strain or the like
JPS58179303A (en) * 1982-04-14 1983-10-20 Matsushita Electric Ind Co Ltd Micro-observing device of surface
JPS6148751A (en) * 1984-08-17 1986-03-10 Sumitomo Metal Ind Ltd Method for detecting surface defect
JPS6463845A (en) * 1987-09-02 1989-03-09 Asahi Optical Co Ltd Method for inspecting surface to be inspected having linear defect
JP2016156822A (en) * 2015-02-25 2016-09-01 株式会社昭和電気研究所 Wafer defect inspection device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57134612U (en) * 1981-02-17 1982-08-21
JPS6313446Y2 (en) * 1981-02-17 1988-04-16
JPS5886408A (en) * 1981-11-18 1983-05-24 Matsushita Electric Ind Co Ltd Detector and extractor for surface strain or the like
JPH0311403B2 (en) * 1981-11-18 1991-02-15 Matsushita Electric Ind Co Ltd
JPS58179303A (en) * 1982-04-14 1983-10-20 Matsushita Electric Ind Co Ltd Micro-observing device of surface
JPH044526B2 (en) * 1982-04-14 1992-01-28
JPS6148751A (en) * 1984-08-17 1986-03-10 Sumitomo Metal Ind Ltd Method for detecting surface defect
JPS6463845A (en) * 1987-09-02 1989-03-09 Asahi Optical Co Ltd Method for inspecting surface to be inspected having linear defect
JP2016156822A (en) * 2015-02-25 2016-09-01 株式会社昭和電気研究所 Wafer defect inspection device

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