JPS55100981A - Magnetron sputtering apparatus - Google Patents
Magnetron sputtering apparatusInfo
- Publication number
- JPS55100981A JPS55100981A JP754579A JP754579A JPS55100981A JP S55100981 A JPS55100981 A JP S55100981A JP 754579 A JP754579 A JP 754579A JP 754579 A JP754579 A JP 754579A JP S55100981 A JPS55100981 A JP S55100981A
- Authority
- JP
- Japan
- Prior art keywords
- magnet
- target
- sputtering
- distance
- fixed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP754579A JPS55100981A (en) | 1979-01-24 | 1979-01-24 | Magnetron sputtering apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP754579A JPS55100981A (en) | 1979-01-24 | 1979-01-24 | Magnetron sputtering apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55100981A true JPS55100981A (en) | 1980-08-01 |
JPS61427B2 JPS61427B2 (ja) | 1986-01-08 |
Family
ID=11668754
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP754579A Granted JPS55100981A (en) | 1979-01-24 | 1979-01-24 | Magnetron sputtering apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55100981A (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2496126A1 (fr) * | 1980-12-13 | 1982-06-18 | Leybold Heraeus Gmbh & Co Kg | Dispositif cathodique et procede d |
JPS59104476A (ja) * | 1982-12-01 | 1984-06-16 | Tokuda Seisakusho Ltd | スパツタリング装置 |
JPS60262970A (ja) * | 1984-06-11 | 1985-12-26 | Ulvac Corp | 磁性体タ−ゲツト用カソ−ド装置 |
JPS63123668U (ja) * | 1987-02-04 | 1988-08-11 | ||
JPH01119667A (ja) * | 1987-11-02 | 1989-05-11 | Agency Of Ind Science & Technol | スパッタ膜形成装置 |
JPH02107763A (ja) * | 1988-10-14 | 1990-04-19 | Nippon Telegr & Teleph Corp <Ntt> | 薄膜形成方法 |
JP2007514058A (ja) * | 2003-12-12 | 2007-05-31 | アプライド マテリアルズ インコーポレイテッド | マグネトロンとスパッタターゲットとの間の間隔の補償 |
CN110885965A (zh) * | 2019-11-04 | 2020-03-17 | 北京北方华创微电子装备有限公司 | 物理气相沉积腔室和物理气相沉积设备 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3325394A (en) * | 1963-07-01 | 1967-06-13 | Ibm | Magnetic control of film deposition |
JPS5575657U (ja) * | 1978-11-15 | 1980-05-24 |
-
1979
- 1979-01-24 JP JP754579A patent/JPS55100981A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3325394A (en) * | 1963-07-01 | 1967-06-13 | Ibm | Magnetic control of film deposition |
JPS5575657U (ja) * | 1978-11-15 | 1980-05-24 |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3047113C2 (ja) * | 1980-12-13 | 1989-06-15 | Leybold Ag, 6450 Hanau, De | |
DE3047113A1 (de) * | 1980-12-13 | 1982-07-29 | Leybold-Heraeus GmbH, 5000 Köln | Katodenanordnung und regelverfahren fuer katodenzerstaeubungsanlagen mit einem magnetsystem zur erhoehung der zerstaeubungsrate |
JPS57123976A (en) * | 1980-12-13 | 1982-08-02 | Leybold Heraeus Gmbh & Co Kg | Cathode apparatus for cathode sputtering apparatus and method for adjusting distance between magnet system and target plate therein |
FR2496126A1 (fr) * | 1980-12-13 | 1982-06-18 | Leybold Heraeus Gmbh & Co Kg | Dispositif cathodique et procede d |
JPS59104476A (ja) * | 1982-12-01 | 1984-06-16 | Tokuda Seisakusho Ltd | スパツタリング装置 |
JPS60262970A (ja) * | 1984-06-11 | 1985-12-26 | Ulvac Corp | 磁性体タ−ゲツト用カソ−ド装置 |
JPS63123668U (ja) * | 1987-02-04 | 1988-08-11 | ||
JPH01119667A (ja) * | 1987-11-02 | 1989-05-11 | Agency Of Ind Science & Technol | スパッタ膜形成装置 |
JPH02107763A (ja) * | 1988-10-14 | 1990-04-19 | Nippon Telegr & Teleph Corp <Ntt> | 薄膜形成方法 |
JP2007514058A (ja) * | 2003-12-12 | 2007-05-31 | アプライド マテリアルズ インコーポレイテッド | マグネトロンとスパッタターゲットとの間の間隔の補償 |
CN110885965A (zh) * | 2019-11-04 | 2020-03-17 | 北京北方华创微电子装备有限公司 | 物理气相沉积腔室和物理气相沉积设备 |
CN110885965B (zh) * | 2019-11-04 | 2021-07-13 | 北京北方华创微电子装备有限公司 | 物理气相沉积腔室和物理气相沉积设备 |
US11732346B2 (en) | 2019-11-04 | 2023-08-22 | Beijing Naura Microelectronics Equipment Co., Ltd. | Physical vapor deposition chamber and physical vapor deposition apparatus |
Also Published As
Publication number | Publication date |
---|---|
JPS61427B2 (ja) | 1986-01-08 |
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