JPS55100976A - Deposition of aluminium - Google Patents
Deposition of aluminiumInfo
- Publication number
- JPS55100976A JPS55100976A JP713579A JP713579A JPS55100976A JP S55100976 A JPS55100976 A JP S55100976A JP 713579 A JP713579 A JP 713579A JP 713579 A JP713579 A JP 713579A JP S55100976 A JPS55100976 A JP S55100976A
- Authority
- JP
- Japan
- Prior art keywords
- aluminium
- evaporation
- film
- amount
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To raise the amount of evaporation per unit of time by using aluminium ingot containing less than a specified amount of Si as a vaporizing source in the formation of aluminium film on electrode, wire, etc., of semiconductor device. CONSTITUTION:In the deposition by evaporation of aluminium using electron beam, an aluminium ingot containing 30% or less Si as a vaporizing source is used. The addition of Si lowers the melting point and makes the thermal conductivity worse and thereby the amount of evaporation per unit of time is made greater than that of pure aluminium. Also, because Si has lower vapor pressure than that of Al, deposited film by evaporation becomes a nearly pure Al film and therefore no adverse influence is exerted on the electrode, wire, etc., of semiconductor device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP713579A JPS55100976A (en) | 1979-01-26 | 1979-01-26 | Deposition of aluminium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP713579A JPS55100976A (en) | 1979-01-26 | 1979-01-26 | Deposition of aluminium |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55100976A true JPS55100976A (en) | 1980-08-01 |
Family
ID=11657626
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP713579A Pending JPS55100976A (en) | 1979-01-26 | 1979-01-26 | Deposition of aluminium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55100976A (en) |
-
1979
- 1979-01-26 JP JP713579A patent/JPS55100976A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB796896A (en) | Method of producing selenium rectifiers | |
JPS5425178A (en) | Manufacture for semiconductor device | |
JPS55100976A (en) | Deposition of aluminium | |
JPS5380966A (en) | Manufacture of electrode fdr semiconductor device | |
JPS5573865A (en) | Manufacture of vapor deposition coating | |
GB1122577A (en) | Method of and devices for the vaporisation of materials | |
JPS52146559A (en) | Electrode forming method | |
JPS5390777A (en) | Semiconductor device and its production | |
JPS5243362A (en) | Liquid growth method | |
GB1270638A (en) | Process and apparatus for the production of alloys | |
JPS5354988A (en) | Production of semiconductor device | |
JPS5395570A (en) | Forming method of epitaxial layer | |
JPS52144272A (en) | Forming method of electrode in semiconductor device | |
JPS53115095A (en) | Preparation of porcelain electron articles | |
JPS5459091A (en) | Semiconductor device | |
JPS5564350A (en) | Radioactive-ray receiving face | |
JPS5538430A (en) | Condensed heat transmission surface and its manufacturing | |
JPS5231695A (en) | Productin method of x-ray tube | |
JPS5279771A (en) | Forming method for electrodes of semiconductor device | |
JPS52141565A (en) | Manufacture of semiconductor unit | |
JPS5678413A (en) | Preparation of amorphous silicon | |
JPS5340692A (en) | Forming method for evaporated film of high purity | |
JPS5754250A (en) | Amorphous alloy having small temperature coefficient of modulus of elasticity | |
JPS5298474A (en) | Vapor phase growth under reduced pressure | |
JPS52136589A (en) | Production of semiconductor device |