JPS55100976A - Deposition of aluminium - Google Patents

Deposition of aluminium

Info

Publication number
JPS55100976A
JPS55100976A JP713579A JP713579A JPS55100976A JP S55100976 A JPS55100976 A JP S55100976A JP 713579 A JP713579 A JP 713579A JP 713579 A JP713579 A JP 713579A JP S55100976 A JPS55100976 A JP S55100976A
Authority
JP
Japan
Prior art keywords
aluminium
evaporation
film
amount
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP713579A
Other languages
Japanese (ja)
Inventor
Hirobumi Yoshida
Tatsuo Itagaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP713579A priority Critical patent/JPS55100976A/en
Publication of JPS55100976A publication Critical patent/JPS55100976A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To raise the amount of evaporation per unit of time by using aluminium ingot containing less than a specified amount of Si as a vaporizing source in the formation of aluminium film on electrode, wire, etc., of semiconductor device. CONSTITUTION:In the deposition by evaporation of aluminium using electron beam, an aluminium ingot containing 30% or less Si as a vaporizing source is used. The addition of Si lowers the melting point and makes the thermal conductivity worse and thereby the amount of evaporation per unit of time is made greater than that of pure aluminium. Also, because Si has lower vapor pressure than that of Al, deposited film by evaporation becomes a nearly pure Al film and therefore no adverse influence is exerted on the electrode, wire, etc., of semiconductor device.
JP713579A 1979-01-26 1979-01-26 Deposition of aluminium Pending JPS55100976A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP713579A JPS55100976A (en) 1979-01-26 1979-01-26 Deposition of aluminium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP713579A JPS55100976A (en) 1979-01-26 1979-01-26 Deposition of aluminium

Publications (1)

Publication Number Publication Date
JPS55100976A true JPS55100976A (en) 1980-08-01

Family

ID=11657626

Family Applications (1)

Application Number Title Priority Date Filing Date
JP713579A Pending JPS55100976A (en) 1979-01-26 1979-01-26 Deposition of aluminium

Country Status (1)

Country Link
JP (1) JPS55100976A (en)

Similar Documents

Publication Publication Date Title
GB796896A (en) Method of producing selenium rectifiers
JPS5425178A (en) Manufacture for semiconductor device
JPS55100976A (en) Deposition of aluminium
JPS5380966A (en) Manufacture of electrode fdr semiconductor device
JPS5573865A (en) Manufacture of vapor deposition coating
GB1122577A (en) Method of and devices for the vaporisation of materials
JPS52146559A (en) Electrode forming method
JPS5390777A (en) Semiconductor device and its production
JPS5243362A (en) Liquid growth method
GB1270638A (en) Process and apparatus for the production of alloys
JPS5354988A (en) Production of semiconductor device
JPS5395570A (en) Forming method of epitaxial layer
JPS52144272A (en) Forming method of electrode in semiconductor device
JPS53115095A (en) Preparation of porcelain electron articles
JPS5459091A (en) Semiconductor device
JPS5564350A (en) Radioactive-ray receiving face
JPS5538430A (en) Condensed heat transmission surface and its manufacturing
JPS5231695A (en) Productin method of x-ray tube
JPS5279771A (en) Forming method for electrodes of semiconductor device
JPS52141565A (en) Manufacture of semiconductor unit
JPS5678413A (en) Preparation of amorphous silicon
JPS5340692A (en) Forming method for evaporated film of high purity
JPS5754250A (en) Amorphous alloy having small temperature coefficient of modulus of elasticity
JPS5298474A (en) Vapor phase growth under reduced pressure
JPS52136589A (en) Production of semiconductor device