JPS5495182A - Method of airtightly joining high purity silicon part - Google Patents

Method of airtightly joining high purity silicon part

Info

Publication number
JPS5495182A
JPS5495182A JP15589378A JP15589378A JPS5495182A JP S5495182 A JPS5495182 A JP S5495182A JP 15589378 A JP15589378 A JP 15589378A JP 15589378 A JP15589378 A JP 15589378A JP S5495182 A JPS5495182 A JP S5495182A
Authority
JP
Japan
Prior art keywords
high purity
purity silicon
silicon part
joining high
airtightly joining
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15589378A
Other languages
Japanese (ja)
Other versions
JPS6128427B2 (en
Inventor
Guriisuhanmeru Ruudorufu
Rorentsu Herumuuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Original Assignee
Wacker Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Siltronic AG filed Critical Wacker Siltronic AG
Publication of JPS5495182A publication Critical patent/JPS5495182A/en
Publication of JPS6128427B2 publication Critical patent/JPS6128427B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/28—Selection of soldering or welding materials proper with the principal constituent melting at less than 950 degrees C
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Products (AREA)
  • Silicon Compounds (AREA)
  • Arc Welding In General (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Adhesives Or Adhesive Processes (AREA)
JP15589378A 1978-01-05 1978-12-19 Method of airtightly joining high purity silicon part Granted JPS5495182A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19782800507 DE2800507A1 (en) 1978-01-05 1978-01-05 PROCESS FOR GAS SEALING CONNECTING HIGHLY PURE SILICON MOLDED PARTS

Publications (2)

Publication Number Publication Date
JPS5495182A true JPS5495182A (en) 1979-07-27
JPS6128427B2 JPS6128427B2 (en) 1986-06-30

Family

ID=6029060

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15589378A Granted JPS5495182A (en) 1978-01-05 1978-12-19 Method of airtightly joining high purity silicon part

Country Status (7)

Country Link
JP (1) JPS5495182A (en)
BE (1) BE873323A (en)
DE (1) DE2800507A1 (en)
DK (1) DK4079A (en)
FR (1) FR2413934A1 (en)
GB (1) GB2014891B (en)
IT (1) IT1114308B (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1917016B2 (en) * 1969-04-02 1972-01-05 Siemens AG, 1000 Berlin u. 8000 München PROCESS FOR MANUFACTURING HOLLOW BODIES FROM SEMICONDUCTOR MATERIAL

Also Published As

Publication number Publication date
FR2413934A1 (en) 1979-08-03
JPS6128427B2 (en) 1986-06-30
BE873323A (en) 1979-07-05
IT1114308B (en) 1986-01-27
DK4079A (en) 1979-07-06
GB2014891A (en) 1979-09-05
IT7947518A0 (en) 1979-01-03
GB2014891B (en) 1982-05-06
DE2800507A1 (en) 1979-07-19

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