IT7947518A0 - PROCEDURE FOR GAS-TIGHTLY CONNECTING MOLDED PIECES OF PURE SILICON - Google Patents

PROCEDURE FOR GAS-TIGHTLY CONNECTING MOLDED PIECES OF PURE SILICON

Info

Publication number
IT7947518A0
IT7947518A0 IT7947518A IT4751879A IT7947518A0 IT 7947518 A0 IT7947518 A0 IT 7947518A0 IT 7947518 A IT7947518 A IT 7947518A IT 4751879 A IT4751879 A IT 4751879A IT 7947518 A0 IT7947518 A0 IT 7947518A0
Authority
IT
Italy
Prior art keywords
procedure
gas
pure silicon
molded pieces
tightly connecting
Prior art date
Application number
IT7947518A
Other languages
Italian (it)
Other versions
IT1114308B (en
Original Assignee
Wacker Chemitronic
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Chemitronic filed Critical Wacker Chemitronic
Publication of IT7947518A0 publication Critical patent/IT7947518A0/en
Application granted granted Critical
Publication of IT1114308B publication Critical patent/IT1114308B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/28—Selection of soldering or welding materials proper with the principal constituent melting at less than 950 degrees C
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Arc Welding In General (AREA)
  • Ceramic Products (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Adhesives Or Adhesive Processes (AREA)
IT47518/79A 1978-01-05 1979-01-03 PROCEDURE FOR CONNECTING MODELED PURE SILICONE PIECES TO GAS SEAL IT1114308B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19782800507 DE2800507A1 (en) 1978-01-05 1978-01-05 PROCESS FOR GAS SEALING CONNECTING HIGHLY PURE SILICON MOLDED PARTS

Publications (2)

Publication Number Publication Date
IT7947518A0 true IT7947518A0 (en) 1979-01-03
IT1114308B IT1114308B (en) 1986-01-27

Family

ID=6029060

Family Applications (1)

Application Number Title Priority Date Filing Date
IT47518/79A IT1114308B (en) 1978-01-05 1979-01-03 PROCEDURE FOR CONNECTING MODELED PURE SILICONE PIECES TO GAS SEAL

Country Status (7)

Country Link
JP (1) JPS5495182A (en)
BE (1) BE873323A (en)
DE (1) DE2800507A1 (en)
DK (1) DK4079A (en)
FR (1) FR2413934A1 (en)
GB (1) GB2014891B (en)
IT (1) IT1114308B (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1917016B2 (en) * 1969-04-02 1972-01-05 Siemens AG, 1000 Berlin u. 8000 München PROCESS FOR MANUFACTURING HOLLOW BODIES FROM SEMICONDUCTOR MATERIAL

Also Published As

Publication number Publication date
GB2014891A (en) 1979-09-05
JPS6128427B2 (en) 1986-06-30
DE2800507A1 (en) 1979-07-19
JPS5495182A (en) 1979-07-27
IT1114308B (en) 1986-01-27
GB2014891B (en) 1982-05-06
DK4079A (en) 1979-07-06
FR2413934A1 (en) 1979-08-03
BE873323A (en) 1979-07-05

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