FR2413934A1 - PROCESS FOR MAKING A GAS-TIGHT WELD BETWEEN VERY PURE SILICON MOLDED PARTS - Google Patents

PROCESS FOR MAKING A GAS-TIGHT WELD BETWEEN VERY PURE SILICON MOLDED PARTS

Info

Publication number
FR2413934A1
FR2413934A1 FR7900146A FR7900146A FR2413934A1 FR 2413934 A1 FR2413934 A1 FR 2413934A1 FR 7900146 A FR7900146 A FR 7900146A FR 7900146 A FR7900146 A FR 7900146A FR 2413934 A1 FR2413934 A1 FR 2413934A1
Authority
FR
France
Prior art keywords
gas
making
pure silicon
molded parts
tight weld
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7900146A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Original Assignee
Wacker Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Siltronic AG filed Critical Wacker Siltronic AG
Publication of FR2413934A1 publication Critical patent/FR2413934A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/28—Selection of soldering or welding materials proper with the principal constituent melting at less than 950 degrees C
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Silicon Compounds (AREA)
  • Ceramic Products (AREA)
  • Arc Welding In General (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

PROCEDE POUR REALISER UNE JONCTION ETANCHE AUX GAZ ENTRE DES PIECES MOULEES EN SILICIUM TRES PUR. CE PROCEDE EST CARACTERISE EN CE QU'ON INTRODUIT DU GERMANIUM ENTRE LES PIECES MOULEES DE SILICIUM A ASSEMBLER ET ON CHAUFFE LA JOINTURE A UNE TEMPERATURE COMPRISE ENTRE 937 ET 1400 C. APPLICATION A LA FABRICATION D'APPAREILS DE LABORATOIRE POUR DES OPERATIONS A EFFECTUER SUR DU SILICIUM TRES PUR, PAR EXEMPLE DANS LA TECHNIQUE DES SEMI-CONDUCTEURS.PROCESS FOR MAKING A GAS-TIGHT JUNCTION BETWEEN VERY PURE SILICON MOLDED PARTS. THIS PROCESS IS CHARACTERIZED IN THAT GERMANIUM IS INTRODUCED BETWEEN THE MOLDED SILICON PARTS TO BE ASSEMBLED AND THE JOINT IS HEATED TO A TEMPERATURE BETWEEN 937 AND 1400 C. APPLICATION TO THE MANUFACTURE OF LABORATORY EQUIPMENT FOR OPERATIONS TO BE PERFORMED ON VERY PURE SILICON, FOR EXAMPLE IN SEMICONDUCTOR TECHNOLOGY.

FR7900146A 1978-01-05 1979-01-04 PROCESS FOR MAKING A GAS-TIGHT WELD BETWEEN VERY PURE SILICON MOLDED PARTS Withdrawn FR2413934A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19782800507 DE2800507A1 (en) 1978-01-05 1978-01-05 PROCESS FOR GAS SEALING CONNECTING HIGHLY PURE SILICON MOLDED PARTS

Publications (1)

Publication Number Publication Date
FR2413934A1 true FR2413934A1 (en) 1979-08-03

Family

ID=6029060

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7900146A Withdrawn FR2413934A1 (en) 1978-01-05 1979-01-04 PROCESS FOR MAKING A GAS-TIGHT WELD BETWEEN VERY PURE SILICON MOLDED PARTS

Country Status (7)

Country Link
JP (1) JPS5495182A (en)
BE (1) BE873323A (en)
DE (1) DE2800507A1 (en)
DK (1) DK4079A (en)
FR (1) FR2413934A1 (en)
GB (1) GB2014891B (en)
IT (1) IT1114308B (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2038160A1 (en) * 1969-04-02 1971-01-08 Siemens Ag

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2038160A1 (en) * 1969-04-02 1971-01-08 Siemens Ag

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/71 *

Also Published As

Publication number Publication date
JPS5495182A (en) 1979-07-27
IT1114308B (en) 1986-01-27
GB2014891B (en) 1982-05-06
DE2800507A1 (en) 1979-07-19
DK4079A (en) 1979-07-06
GB2014891A (en) 1979-09-05
BE873323A (en) 1979-07-05
IT7947518A0 (en) 1979-01-03
JPS6128427B2 (en) 1986-06-30

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Legal Events

Date Code Title Description
ST Notification of lapse