GB2014891A - Process for joining silicon bodies - Google Patents

Process for joining silicon bodies

Info

Publication number
GB2014891A
GB2014891A GB7900458A GB7900458A GB2014891A GB 2014891 A GB2014891 A GB 2014891A GB 7900458 A GB7900458 A GB 7900458A GB 7900458 A GB7900458 A GB 7900458A GB 2014891 A GB2014891 A GB 2014891A
Authority
GB
United Kingdom
Prior art keywords
silicon bodies
joint
joining
germanium
joining silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB7900458A
Other versions
GB2014891B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Original Assignee
Wacker Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Siltronic AG filed Critical Wacker Siltronic AG
Publication of GB2014891A publication Critical patent/GB2014891A/en
Application granted granted Critical
Publication of GB2014891B publication Critical patent/GB2014891B/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/28—Selection of soldering or welding materials proper with the principal constituent melting at less than 950 degrees C
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Arc Welding In General (AREA)
  • Ceramic Products (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

The invention provides a process for joining two silicon bodies together, wherein germanium is used as a joining agent in the joint which is heated to a temperature of 937 to 1400 DEG C. Molten germanium may be allowed to flow into the joint or powdered germanium may be placed between the two silicon parts prior to heating the joint.
GB7900458A 1978-01-05 1979-01-05 Process for joining silicon bodies Expired GB2014891B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19782800507 DE2800507A1 (en) 1978-01-05 1978-01-05 PROCESS FOR GAS SEALING CONNECTING HIGHLY PURE SILICON MOLDED PARTS

Publications (2)

Publication Number Publication Date
GB2014891A true GB2014891A (en) 1979-09-05
GB2014891B GB2014891B (en) 1982-05-06

Family

ID=6029060

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7900458A Expired GB2014891B (en) 1978-01-05 1979-01-05 Process for joining silicon bodies

Country Status (7)

Country Link
JP (1) JPS5495182A (en)
BE (1) BE873323A (en)
DE (1) DE2800507A1 (en)
DK (1) DK4079A (en)
FR (1) FR2413934A1 (en)
GB (1) GB2014891B (en)
IT (1) IT1114308B (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1917016B2 (en) * 1969-04-02 1972-01-05 Siemens AG, 1000 Berlin u. 8000 München PROCESS FOR MANUFACTURING HOLLOW BODIES FROM SEMICONDUCTOR MATERIAL

Also Published As

Publication number Publication date
JPS6128427B2 (en) 1986-06-30
DE2800507A1 (en) 1979-07-19
JPS5495182A (en) 1979-07-27
IT7947518A0 (en) 1979-01-03
IT1114308B (en) 1986-01-27
GB2014891B (en) 1982-05-06
DK4079A (en) 1979-07-06
FR2413934A1 (en) 1979-08-03
BE873323A (en) 1979-07-05

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee