JPS5550621A - Method of bonding refractory metal contact member to semiconductor - Google Patents

Method of bonding refractory metal contact member to semiconductor

Info

Publication number
JPS5550621A
JPS5550621A JP12095079A JP12095079A JPS5550621A JP S5550621 A JPS5550621 A JP S5550621A JP 12095079 A JP12095079 A JP 12095079A JP 12095079 A JP12095079 A JP 12095079A JP S5550621 A JPS5550621 A JP S5550621A
Authority
JP
Japan
Prior art keywords
metal contact
refractory metal
contact member
semiconductor
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12095079A
Other languages
Japanese (ja)
Inventor
Garesu Richiyaazu Jiyon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arris Technology Inc
Original Assignee
Arris Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arris Technology Inc filed Critical Arris Technology Inc
Publication of JPS5550621A publication Critical patent/JPS5550621A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • H01L23/3171Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492Bases or plates or solder therefor
    • H01L23/4924Bases or plates or solder therefor characterised by the materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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    • H01ELECTRIC ELEMENTS
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    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/291Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
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    • H01L2224/831Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
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    • H01L2224/8319Arrangement of the layer connectors prior to mounting
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    • H01L2224/838Bonding techniques
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    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]
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    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1203Rectifying Diode
    • H01L2924/12036PN diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Wire Bonding (AREA)

Abstract

The invention provides a method for bonding a refractory metal contact 18'/20' to a semiconductor body 12' in which a silver-germanium alloy 44/46 is interposed between the surface of the refractory metal contact member and the surface of the semiconductor body. The assembly is then heated until the alloy enters the slush state. The assembly is thereafter rapidly quenched to freeze the alloy, thereby forming a high-strength bond. Typically, the alloy comprises 85-99% Ag and 15-1% Ge. In one example, the assembly is heated to a temperature of about 835 DEG C. <IMAGE>
JP12095079A 1978-09-22 1979-09-21 Method of bonding refractory metal contact member to semiconductor Pending JPS5550621A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US94475978A 1978-09-22 1978-09-22

Publications (1)

Publication Number Publication Date
JPS5550621A true JPS5550621A (en) 1980-04-12

Family

ID=25482019

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12095079A Pending JPS5550621A (en) 1978-09-22 1979-09-21 Method of bonding refractory metal contact member to semiconductor

Country Status (4)

Country Link
JP (1) JPS5550621A (en)
DE (1) DE2934299A1 (en)
FR (1) FR2437066A1 (en)
GB (1) GB2031223A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5846754A (en) * 1981-09-16 1983-03-18 Iwatsu Electric Co Ltd Privacy telephone circuit
JPS607256A (en) * 1983-06-27 1985-01-16 Kanda Tsushin Kogyo Kk Master/slave telephone set with transfer function
JPS6214432A (en) * 1985-07-11 1987-01-23 ナシヨナル・セミコンダクタ−・コ−ポレ−シヨン Improved semiconductor die adhesion method and product thereof
US5099515A (en) * 1989-09-19 1992-03-24 Kabushiki Kaisha Nippon Conlux Secrecy device for wiretapping prevention and detection

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2487579A1 (en) * 1980-07-24 1982-01-29 Silicium Semiconducteur Ssc Assembly jig for semiconductor diodes - where rectifier chip and two solder preforms are aligned between two connector pins, and then jig is heated so the chip is soldered

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE547698A (en) * 1955-05-10 1900-01-01
GB1027525A (en) * 1962-03-02
US3996602A (en) * 1975-08-14 1976-12-07 General Instrument Corporation Passivated and encapsulated semiconductors and method of making same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5846754A (en) * 1981-09-16 1983-03-18 Iwatsu Electric Co Ltd Privacy telephone circuit
JPS607256A (en) * 1983-06-27 1985-01-16 Kanda Tsushin Kogyo Kk Master/slave telephone set with transfer function
JPH0320098B2 (en) * 1983-06-27 1991-03-18 Kanda Tsushin Kogyo Kk
JPS6214432A (en) * 1985-07-11 1987-01-23 ナシヨナル・セミコンダクタ−・コ−ポレ−シヨン Improved semiconductor die adhesion method and product thereof
US5099515A (en) * 1989-09-19 1992-03-24 Kabushiki Kaisha Nippon Conlux Secrecy device for wiretapping prevention and detection

Also Published As

Publication number Publication date
FR2437066A1 (en) 1980-04-18
DE2934299A1 (en) 1980-04-03
GB2031223A (en) 1980-04-16

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