GB2014891B - Process for joining silicon bodies - Google Patents

Process for joining silicon bodies

Info

Publication number
GB2014891B
GB2014891B GB7900458A GB7900458A GB2014891B GB 2014891 B GB2014891 B GB 2014891B GB 7900458 A GB7900458 A GB 7900458A GB 7900458 A GB7900458 A GB 7900458A GB 2014891 B GB2014891 B GB 2014891B
Authority
GB
United Kingdom
Prior art keywords
silicon bodies
joining silicon
joining
bodies
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7900458A
Other versions
GB2014891A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Original Assignee
Wacker Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Siltronic AG filed Critical Wacker Siltronic AG
Publication of GB2014891A publication Critical patent/GB2014891A/en
Application granted granted Critical
Publication of GB2014891B publication Critical patent/GB2014891B/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/28—Selection of soldering or welding materials proper with the principal constituent melting at less than 950 degrees C
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Silicon Compounds (AREA)
  • Ceramic Products (AREA)
  • Arc Welding In General (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Adhesives Or Adhesive Processes (AREA)
GB7900458A 1978-01-05 1979-01-05 Process for joining silicon bodies Expired GB2014891B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19782800507 DE2800507A1 (en) 1978-01-05 1978-01-05 PROCESS FOR GAS SEALING CONNECTING HIGHLY PURE SILICON MOLDED PARTS

Publications (2)

Publication Number Publication Date
GB2014891A GB2014891A (en) 1979-09-05
GB2014891B true GB2014891B (en) 1982-05-06

Family

ID=6029060

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7900458A Expired GB2014891B (en) 1978-01-05 1979-01-05 Process for joining silicon bodies

Country Status (7)

Country Link
JP (1) JPS5495182A (en)
BE (1) BE873323A (en)
DE (1) DE2800507A1 (en)
DK (1) DK4079A (en)
FR (1) FR2413934A1 (en)
GB (1) GB2014891B (en)
IT (1) IT1114308B (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1917016B2 (en) * 1969-04-02 1972-01-05 Siemens AG, 1000 Berlin u. 8000 München PROCESS FOR MANUFACTURING HOLLOW BODIES FROM SEMICONDUCTOR MATERIAL

Also Published As

Publication number Publication date
JPS5495182A (en) 1979-07-27
IT1114308B (en) 1986-01-27
DE2800507A1 (en) 1979-07-19
DK4079A (en) 1979-07-06
GB2014891A (en) 1979-09-05
FR2413934A1 (en) 1979-08-03
BE873323A (en) 1979-07-05
IT7947518A0 (en) 1979-01-03
JPS6128427B2 (en) 1986-06-30

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee