JPS5494279A - Package for semiconductor device - Google Patents

Package for semiconductor device

Info

Publication number
JPS5494279A
JPS5494279A JP163278A JP163278A JPS5494279A JP S5494279 A JPS5494279 A JP S5494279A JP 163278 A JP163278 A JP 163278A JP 163278 A JP163278 A JP 163278A JP S5494279 A JPS5494279 A JP S5494279A
Authority
JP
Japan
Prior art keywords
electrode
gate
drain
source
package
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP163278A
Other languages
Japanese (ja)
Inventor
Kenji Horikiri
Masao Aiga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP163278A priority Critical patent/JPS5494279A/en
Publication of JPS5494279A publication Critical patent/JPS5494279A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

Abstract

PURPOSE: To reduce drain-gate capacity by providing a strip form conductor having shield effect between the input electrode and output electrode of the package.
CONSTITUTION: Unlike conventional packages, a conductor 14 connecting between two source electrodes 5 by passing the intermediate between a gate electrode 3 and a drain electrode 4 is provided in the opposing parts of both electrodes. Since the conductor 14 is connected to the grounded source electrode 5, the gate 3 and drain 4 are cut off and the capacity Cpdg therebetween becomes negligible. Although the gate-source, and drain-source capacities Cpgs, Cpds increase slightly, including these in input-output impedances is satisfactory. If an FET 1 is contained in this package, the maximum effective gain increases and the frequencies used expand.
COPYRIGHT: (C)1979,JPO&Japio
JP163278A 1978-01-10 1978-01-10 Package for semiconductor device Pending JPS5494279A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP163278A JPS5494279A (en) 1978-01-10 1978-01-10 Package for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP163278A JPS5494279A (en) 1978-01-10 1978-01-10 Package for semiconductor device

Publications (1)

Publication Number Publication Date
JPS5494279A true JPS5494279A (en) 1979-07-25

Family

ID=11506897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP163278A Pending JPS5494279A (en) 1978-01-10 1978-01-10 Package for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5494279A (en)

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