JPS5492051A - Focusing method and its apparatus for electron beam device - Google Patents

Focusing method and its apparatus for electron beam device

Info

Publication number
JPS5492051A
JPS5492051A JP15779277A JP15779277A JPS5492051A JP S5492051 A JPS5492051 A JP S5492051A JP 15779277 A JP15779277 A JP 15779277A JP 15779277 A JP15779277 A JP 15779277A JP S5492051 A JPS5492051 A JP S5492051A
Authority
JP
Japan
Prior art keywords
electron beam
circuit
sample
scanning
lens
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15779277A
Other languages
Japanese (ja)
Other versions
JPS5816746B2 (en
Inventor
Takao Namae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Jeol Ltd
Nihon Denshi KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jeol Ltd, Nihon Denshi KK filed Critical Jeol Ltd
Priority to JP52157792A priority Critical patent/JPS5816746B2/en
Publication of JPS5492051A publication Critical patent/JPS5492051A/en
Publication of JPS5816746B2 publication Critical patent/JPS5816746B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To secure the irradiation of the electron beam flux to the test sample in the state of the minimum aberrated circle by scanning the sample in two different ways by means of the electron beam and then obtaining the condenser lens current value with which the electron beam diameter becomes minimum.
CONSTITUTION: The electron beam condensed through objective lens 12 is deflected by deflecting coil 13X and 13Y to scan on sample 11 to be observed. In this case, switch circuit 18 provided at the circuit is turned toward focusing device 16, swtich circuit 26X and 26Y and turned toward terminals 2 of scanning signal generator 25X and 25Y each, and other switches 22 and 23 are opened. After this, the focusing action is started to vary the object lens current gradually and in steps with every scanning via the electron beam, and the secondary electron given from sample 11 is detected through detector 14. Then the secondary scanning is integrated to generate the stop signal at timing circuit 17 when the integrating value becomes maximum. And the current of lens 12 is fixed then to be memorized in memory circuit 20. This method is applied also in other directions.
COPYRIGHT: (C)1979,JPO&Japio
JP52157792A 1977-12-29 1977-12-29 Focusing method and device in electron beam equipment Expired JPS5816746B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52157792A JPS5816746B2 (en) 1977-12-29 1977-12-29 Focusing method and device in electron beam equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52157792A JPS5816746B2 (en) 1977-12-29 1977-12-29 Focusing method and device in electron beam equipment

Publications (2)

Publication Number Publication Date
JPS5492051A true JPS5492051A (en) 1979-07-20
JPS5816746B2 JPS5816746B2 (en) 1983-04-01

Family

ID=15657380

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52157792A Expired JPS5816746B2 (en) 1977-12-29 1977-12-29 Focusing method and device in electron beam equipment

Country Status (1)

Country Link
JP (1) JPS5816746B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5766637A (en) * 1980-10-14 1982-04-22 Toshiba Corp Exposure device for electron beam

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4834477A (en) * 1971-09-06 1973-05-18
JPS5049442A (en) * 1973-09-06 1975-05-02
JPS5212560A (en) * 1975-07-21 1977-01-31 Hitachi Ltd Electronic beam probe control device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4834477A (en) * 1971-09-06 1973-05-18
JPS5049442A (en) * 1973-09-06 1975-05-02
JPS5212560A (en) * 1975-07-21 1977-01-31 Hitachi Ltd Electronic beam probe control device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5766637A (en) * 1980-10-14 1982-04-22 Toshiba Corp Exposure device for electron beam

Also Published As

Publication number Publication date
JPS5816746B2 (en) 1983-04-01

Similar Documents

Publication Publication Date Title
JPS5457949A (en) Automatic focusing unit for scanning electron microscope and so on
JPS5492050A (en) Method and apparatus for astigmatic correction of scanning electronic microscope and others
JPS5730253A (en) Secondary electron detector for scan type electron microscope
Held et al. Molecular Cesium Component in Multiphoton Ionization of a Cesium Atomic Beam by a Q-Switched Neodymium-Glass Laser at 1.06 μm
JPS5492051A (en) Focusing method and its apparatus for electron beam device
JPS54114173A (en) Electronic probe device
JPS5456722A (en) Solid state pickup device
JPS5613649A (en) Correcting method and device for astigmatism in scanning type electron microscope and the like
JPS54128288A (en) Electron beam exposure device
JPS5457948A (en) Automatic focusing unit for scanning electron microscope and so on
JPS5527903A (en) Method and unit for indicating partialy discharging position of electric apparatus
JPS53107001A (en) Automatic testing device for vehicle
JPS54100661A (en) Focusing unit of electron-beam device
JPS56135153A (en) Laser-scan-type ultrasonic microscope
JPS5554284A (en) Electron beam deflecting device
JPS56112059A (en) Electron beam device
JPS53128975A (en) Automatic focus control device for scanning type electron beam device and others
FR2024057A6 (en) Focusing an electron beam during welding - by electronic bombardment
WHITE A dynamic crossed-field photomultiplier with an electron bombarded semiconductor collector[Ph. D. Thesis]
JPS61220330A (en) Method and apparatus for ion beam processing of semiconductor device
JPS5256824A (en) Lead-in range test system for automatic phase control unit
JPS5347263A (en) Scan-type electronic microscope and its similar device
JPS54102978A (en) Test method for semiconductor element
JPS5312265A (en) Electron lens
JPS5448477A (en) Automatic focussing unit for scanning type electronic microscope and the like