JPS5490975A - Manufacture for mos type semiconductor device - Google Patents
Manufacture for mos type semiconductor deviceInfo
- Publication number
- JPS5490975A JPS5490975A JP15760177A JP15760177A JPS5490975A JP S5490975 A JPS5490975 A JP S5490975A JP 15760177 A JP15760177 A JP 15760177A JP 15760177 A JP15760177 A JP 15760177A JP S5490975 A JPS5490975 A JP S5490975A
- Authority
- JP
- Japan
- Prior art keywords
- film
- drain
- source
- films
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000002513 implantation Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66651—Lateral single gate silicon transistors with a single crystalline channel formed on the silicon substrate after insulating device isolation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Local Oxidation Of Silicon (AREA)
Abstract
PURPOSE: To reduce the capacitance between the drain, source and the substrate, by making flat the surface through implantation of thick insulation film at the part where the drain and source regions are adjacent to the channel and by increasing the dielectric strength through weak electric field between the gate and drain.
CONSTITUTION: The SiO2 film 2 is coared on the P type Si substrate 1, the opening 3 is made on the channel forming part of MOSFET, Si film is grown on the entire surface, and the singlecrystal Si film 4 is formed on the opening 3 and the polycrystal Si films 5a and 5b are formed on the film 2. Next, the SiO2 film 6 is grown on the entire surface, the openings 7a and 7b are made on the films 5a and 5b, and the N+ type source and drain regions 8a and 8b reaching the film 2 are formed by diffusion. After that, the entire surface is covered with the Si3N4 film 9, the film 9 and 6 are selectively removed, and the concaves 12 and 13 are provided at the end of the regions 8a and 8b with etching by taking this as a mask. Next, heat treatment is made and the part is implanted with the thick SiO2 films 14 and 15, and the source, drain and gate electrodes 17,18,19 are respectively attached by removing the film 9.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15760177A JPS5490975A (en) | 1977-12-28 | 1977-12-28 | Manufacture for mos type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15760177A JPS5490975A (en) | 1977-12-28 | 1977-12-28 | Manufacture for mos type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5490975A true JPS5490975A (en) | 1979-07-19 |
Family
ID=15653275
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15760177A Pending JPS5490975A (en) | 1977-12-28 | 1977-12-28 | Manufacture for mos type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5490975A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5126474A (en) * | 1974-08-29 | 1976-03-04 | Seiko Instr & Electronics | Mos gatahandotaisochi no seizohoho |
-
1977
- 1977-12-28 JP JP15760177A patent/JPS5490975A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5126474A (en) * | 1974-08-29 | 1976-03-04 | Seiko Instr & Electronics | Mos gatahandotaisochi no seizohoho |
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