JPS5487525A - Resist construction - Google Patents

Resist construction

Info

Publication number
JPS5487525A
JPS5487525A JP13273578A JP13273578A JPS5487525A JP S5487525 A JPS5487525 A JP S5487525A JP 13273578 A JP13273578 A JP 13273578A JP 13273578 A JP13273578 A JP 13273578A JP S5487525 A JPS5487525 A JP S5487525A
Authority
JP
Japan
Prior art keywords
resist
construction
resist construction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13273578A
Other languages
English (en)
Other versions
JPS5637540B2 (ja
Inventor
Fuen Baiikuu
Chiennkuu Fuen Jiyooji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5487525A publication Critical patent/JPS5487525A/ja
Publication of JPS5637540B2 publication Critical patent/JPS5637540B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
    • H05K3/143—Masks therefor
JP13273578A 1977-12-30 1978-10-30 Resist construction Granted JPS5487525A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/865,814 US4180604A (en) 1977-12-30 1977-12-30 Two layer resist system

Publications (2)

Publication Number Publication Date
JPS5487525A true JPS5487525A (en) 1979-07-12
JPS5637540B2 JPS5637540B2 (ja) 1981-09-01

Family

ID=25346292

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13273578A Granted JPS5487525A (en) 1977-12-30 1978-10-30 Resist construction

Country Status (4)

Country Link
US (1) US4180604A (ja)
EP (1) EP0002795B1 (ja)
JP (1) JPS5487525A (ja)
DE (1) DE2861539D1 (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57205739A (en) * 1981-06-15 1982-12-16 Shuzo Hattori Dry type plate making method
JPS61180241A (ja) * 1985-02-06 1986-08-12 Hitachi Ltd パタ−ン形成方法
JPS6299747A (ja) * 1985-10-17 1987-05-09 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 皮膜形成組成物及びその組成決定方法
JPH03180024A (ja) * 1989-12-08 1991-08-06 Mitsubishi Electric Corp 多層レジスト膜形成方法
JPH06332181A (ja) * 1993-04-30 1994-12-02 Internatl Business Mach Corp <Ibm> レジスト構造とその製造方法
JP2006165328A (ja) * 2004-12-08 2006-06-22 Tokyo Ohka Kogyo Co Ltd レジストパターンの形成方法
KR100944313B1 (ko) 2002-01-25 2010-02-24 제이에스알 가부시끼가이샤 2층 적층막 및 이것을 이용한 패턴 형성 방법
JP2016040588A (ja) * 2014-08-13 2016-03-24 Hoya株式会社 レジスト膜付きマスクブランクおよびその製造方法ならびに転写用マスクの製造方法

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3006527A1 (de) * 1980-02-21 1981-08-27 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von trennduesen fuer die isotopentrennung in einer isotopenanreicherungsanlage
DE3378931D1 (en) * 1982-03-26 1989-02-16 Hitachi Ltd Method for forming fine resist patterns
JPS58205154A (ja) * 1982-05-25 1983-11-30 Fuji Photo Film Co Ltd 感光性平版印刷版
US4526810A (en) * 1982-06-17 1985-07-02 At&T Technologies, Inc. Process for improved wall definition of an additive printed circuit
JPS5911547U (ja) * 1982-07-13 1984-01-24 株式会社パイロット 筆記具兼用ポケツトベル
US4672020A (en) * 1982-09-29 1987-06-09 Minnesota Mining And Manufacturing Company Multilayer dry-film positive-acting o-quinone diazide photoresist with integral laminable layer, photoresist layer, and strippable carrier layer
US4756988A (en) * 1982-09-29 1988-07-12 Minnesota Mining And Manufacturing Company Multilayer dry-film negative-acting photoresist
US4696885A (en) * 1983-09-06 1987-09-29 Energy Conversion Devices, Inc. Method of forming a large surface area integrated circuit
DE3340154A1 (de) * 1983-11-07 1985-05-15 Basf Ag, 6700 Ludwigshafen Verfahren zur herstellung von bildmaessig strukturierten resistschichten und fuer dieses verfahren geeigneter trockenfilmresist
JPS60231388A (ja) * 1984-04-25 1985-11-16 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 基板の活性化方法
US4571374A (en) * 1984-12-27 1986-02-18 Minnesota Mining And Manufacturing Company Multilayer dry-film positive-acting laminable photoresist with two photoresist layers wherein one layer includes thermal adhesive
JPS6231225A (ja) * 1985-08-02 1987-02-10 Nec Corp 携帯形無線送受信機
US4690833A (en) * 1986-03-28 1987-09-01 International Business Machines Corporation Providing circuit lines on a substrate
US4737425A (en) * 1986-06-10 1988-04-12 International Business Machines Corporation Patterned resist and process
DE3621376A1 (de) * 1986-06-26 1988-01-07 Hoechst Ag Strahlungsempfindliches aufzeichnungsmaterial
US4904564A (en) * 1988-06-16 1990-02-27 International Business Machines Corporation Process for imaging multi-layer resist structure
GB8910961D0 (en) * 1989-05-12 1989-06-28 Am Int Method of forming a pattern on a surface
EP0433720A3 (en) * 1989-12-22 1992-08-26 Siemens Aktiengesellschaft Method of applying a solder stop coating on printed circuit boards
JPH0739140U (ja) * 1993-12-10 1995-07-14 株式会社ビデオ・リサーチ テレビジョン視聴率測定用個人識別信号送信機および受信機
DE69508019T2 (de) * 1994-04-12 1999-09-16 Koninkl Philips Electronics Nv Verfahren zum photolithographischen metallisieren zumindest der innenseiten von löchern die in zusammenhang mit einem auf einer aus elektrisch isolierendem material bestehende platte befindlichen muster aufgebracht sind
US6017585A (en) * 1998-02-24 2000-01-25 National Semiconductor Corporation High efficiency semiconductor wafer coating apparatus and method
JP4480812B2 (ja) * 1999-07-27 2010-06-16 富士フイルム株式会社 感光又は感熱性ポジ型平版印刷版原版、および製版方法
JP2002131883A (ja) * 2000-10-27 2002-05-09 Hitachi Ltd フォトマスクの製造方法およびフォトマスク
DE10340926A1 (de) * 2003-09-03 2005-03-31 Technische Universität Ilmenau Abteilung Forschungsförderung und Technologietransfer Verfahren zur Herstellung von elektronischen Bauelementen
CN1922546A (zh) * 2004-02-20 2007-02-28 捷时雅株式会社 凸点形成用双层层积膜及凸点形成方法
US7378225B2 (en) * 2004-04-06 2008-05-27 Kyle Baldwin Method of forming a metal pattern on a substrate
US7674701B2 (en) 2006-02-08 2010-03-09 Amkor Technology, Inc. Methods of forming metal layers using multi-layer lift-off patterns
US7932615B2 (en) 2006-02-08 2011-04-26 Amkor Technology, Inc. Electronic devices including solder bumps on compliant dielectric layers
JP2008060552A (ja) * 2006-08-02 2008-03-13 Osaka Univ 電子回路装置とその製造方法
GB2442030A (en) * 2006-09-19 2008-03-26 Innos Ltd Resist exposure and patterning process
WO2009061823A1 (en) * 2007-11-05 2009-05-14 Trustees Of Tufts College Fabrication of silk fibroin photonic structures by nanocontact imprinting
CN111584707B (zh) * 2020-04-10 2023-02-03 中国科学院上海微系统与信息技术研究所 一种用于snspd器件纳米线结构的双层胶剥离方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS493624A (ja) * 1972-04-20 1974-01-12
JPS51148367A (en) * 1975-06-14 1976-12-20 Fujitsu Ltd Layer construction radiant ray resist

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE541308C (de) * 1929-08-21 1932-01-09 Ullstein A G Verfahren zur Herstellung von Strichaetzungen durch Erzeugung von zwei uebereinanderliegenden AEtzdeckungen, deren zweite gegenueber der darunterliegenden ersten verbreiterte Bildelemente aufweist
US3547629A (en) * 1962-09-27 1970-12-15 American Screen Process Equip Photoflash method of transferring information and fabricating printed circuits
US3506441A (en) * 1967-06-02 1970-04-14 Rca Corp Double photoresist processing
US3904492A (en) * 1969-12-17 1975-09-09 Ibm Dual resist usage in construction of apertured multilayer printed circuit articles
US3669661A (en) * 1970-03-06 1972-06-13 Westinghouse Electric Corp Method of producing thin film transistors
US3745094A (en) * 1971-03-26 1973-07-10 Ibm Two resist method for printed circuit structure
US3799777A (en) * 1972-06-20 1974-03-26 Westinghouse Electric Corp Micro-miniature electronic components by double rejection
US4024122A (en) * 1973-02-12 1977-05-17 Rca Corporation Method of purifying 2,4-bis(6-diazo-5,6-dihydro-5-oxo-1-naphthalenesulfonyloxy benzophenone)
US3873313A (en) * 1973-05-21 1975-03-25 Ibm Process for forming a resist mask
US3849136A (en) * 1973-07-31 1974-11-19 Ibm Masking of deposited thin films by use of a masking layer photoresist composite
US3954469A (en) * 1973-10-01 1976-05-04 Mca Disco-Vision, Inc. Method of creating a replicating matrix
US3934057A (en) * 1973-12-19 1976-01-20 International Business Machines Corporation High sensitivity positive resist layers and mask formation process
US3867148A (en) * 1974-01-08 1975-02-18 Westinghouse Electric Corp Making of micro-miniature electronic components by selective oxidation
US3982943A (en) * 1974-03-05 1976-09-28 Ibm Corporation Lift-off method of fabricating thin films and a structure utilizable as a lift-off mask
DE2425464C3 (de) * 1974-05-27 1978-11-02 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung von Dunnschicht-Aperturblenden für Korpuskularstrahlgeräte
US4007047A (en) * 1974-06-06 1977-02-08 International Business Machines Corporation Modified processing of positive photoresists
JPS51114931A (en) * 1975-04-02 1976-10-09 Hitachi Ltd Photoresist pattern formation method
US4004044A (en) * 1975-05-09 1977-01-18 International Business Machines Corporation Method for forming patterned films utilizing a transparent lift-off mask
US4024293A (en) * 1975-12-10 1977-05-17 International Business Machines Corporation High sensitivity resist system for lift-off metallization

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS493624A (ja) * 1972-04-20 1974-01-12
JPS51148367A (en) * 1975-06-14 1976-12-20 Fujitsu Ltd Layer construction radiant ray resist

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57205739A (en) * 1981-06-15 1982-12-16 Shuzo Hattori Dry type plate making method
JPS61180241A (ja) * 1985-02-06 1986-08-12 Hitachi Ltd パタ−ン形成方法
JPS6299747A (ja) * 1985-10-17 1987-05-09 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 皮膜形成組成物及びその組成決定方法
JPH03180024A (ja) * 1989-12-08 1991-08-06 Mitsubishi Electric Corp 多層レジスト膜形成方法
JPH06332181A (ja) * 1993-04-30 1994-12-02 Internatl Business Mach Corp <Ibm> レジスト構造とその製造方法
KR100944313B1 (ko) 2002-01-25 2010-02-24 제이에스알 가부시끼가이샤 2층 적층막 및 이것을 이용한 패턴 형성 방법
JP2006165328A (ja) * 2004-12-08 2006-06-22 Tokyo Ohka Kogyo Co Ltd レジストパターンの形成方法
JP2016040588A (ja) * 2014-08-13 2016-03-24 Hoya株式会社 レジスト膜付きマスクブランクおよびその製造方法ならびに転写用マスクの製造方法

Also Published As

Publication number Publication date
US4180604A (en) 1979-12-25
EP0002795A2 (de) 1979-07-11
JPS5637540B2 (ja) 1981-09-01
DE2861539D1 (en) 1982-02-25
EP0002795A3 (en) 1979-08-08
EP0002795B1 (de) 1982-01-13

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