JPS5480089A - Characteristics measuring device for semoconductor element - Google Patents

Characteristics measuring device for semoconductor element

Info

Publication number
JPS5480089A
JPS5480089A JP14708777A JP14708777A JPS5480089A JP S5480089 A JPS5480089 A JP S5480089A JP 14708777 A JP14708777 A JP 14708777A JP 14708777 A JP14708777 A JP 14708777A JP S5480089 A JPS5480089 A JP S5480089A
Authority
JP
Japan
Prior art keywords
transistor
temperature
amplifier
thermocouple
measurement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14708777A
Other languages
Japanese (ja)
Inventor
Hiroyuki Nakajima
Mutsuyo Kanetani
Yuichi Ooyama
Kinichi Nakahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14708777A priority Critical patent/JPS5480089A/en
Publication of JPS5480089A publication Critical patent/JPS5480089A/en
Pending legal-status Critical Current

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  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

PURPOSE: To secure an accurate measurement for the transistor regardless of the variation of the ambient temperature by measuring the characterisitcs of the test sample to be measured at the measuring part provided to the measuring device and then detecting the ambient temperature via the temperature detecting means at the time of measurement to feed back the measured temperature to the measuring part after amplification.
CONSTITUTION: Transistor 1 (test sample to be measured) and thermocouple 2 (temperature detecting means) are stored into container 3 featuring such simple structure as to shut out the outside air. Then the output voltage of transistor 1 is applied to operational amplifier 7 via inverse ampifier 4. At the same time, the output of thermocouple 2 is also applied to amplifier 7 via inverse amplifier 5 and inverter 6. After this, the change of the output voltage is calculated via amplifier 7 to the temperature variation of transistor 1 and thermocouple 2 each, and the result of calculation is fed back to measuring part 9. In this way, no measurement error is caused regardless of the variation of the transistor ambinent temperature, also shortening the measurement time.
COPYRIGHT: (C)1979,JPO&Japio
JP14708777A 1977-12-09 1977-12-09 Characteristics measuring device for semoconductor element Pending JPS5480089A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14708777A JPS5480089A (en) 1977-12-09 1977-12-09 Characteristics measuring device for semoconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14708777A JPS5480089A (en) 1977-12-09 1977-12-09 Characteristics measuring device for semoconductor element

Publications (1)

Publication Number Publication Date
JPS5480089A true JPS5480089A (en) 1979-06-26

Family

ID=15422164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14708777A Pending JPS5480089A (en) 1977-12-09 1977-12-09 Characteristics measuring device for semoconductor element

Country Status (1)

Country Link
JP (1) JPS5480089A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6189179U (en) * 1984-11-15 1986-06-10

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6189179U (en) * 1984-11-15 1986-06-10

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