JPS5479573A - Electrostatic induction type transistor - Google Patents
Electrostatic induction type transistorInfo
- Publication number
- JPS5479573A JPS5479573A JP14750577A JP14750577A JPS5479573A JP S5479573 A JPS5479573 A JP S5479573A JP 14750577 A JP14750577 A JP 14750577A JP 14750577 A JP14750577 A JP 14750577A JP S5479573 A JPS5479573 A JP S5479573A
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial layer
- layer
- region
- regions
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To reduce the power consumption of a transistor connected to an epitaxial layer by prescribing the thickness of the epitaxial layer so that when the epitaxial layer as a channel is grown on a semiconductor substrate, an outward diffusion layer from the substrate to the epitaxial layer and a depletion layer expanding from a gate region to a channel region will not overlap.
CONSTITUTION: On N+-type Si substrate 1 as a source region, N--tyep layer 2 as a channel region is epitaxy-grown, where P+-type gate regions 3 and 4, and N+-type drain region 5 between the both and connected to them are diffusion-formed respectively. Next, the entire surface is covered with oxidized film 6, an opening is provided, and Al electrode 7 connected to both regions 3 and 5 is fitted. In this constitution, the thickness of epitaxial layer 2 is so selected that depletion layer 9 generated by regions 3 and 4 and region 8 diffusing toward from substrate 1 into epitaxial layer 2 will not overlap. As a result, when regions 3 and 4 are connected to a lateral PNP bipolar transistor, its base-grounded current amplification factor will nt decrease.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14750577A JPS5479573A (en) | 1977-12-08 | 1977-12-08 | Electrostatic induction type transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14750577A JPS5479573A (en) | 1977-12-08 | 1977-12-08 | Electrostatic induction type transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5479573A true JPS5479573A (en) | 1979-06-25 |
Family
ID=15431876
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14750577A Pending JPS5479573A (en) | 1977-12-08 | 1977-12-08 | Electrostatic induction type transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5479573A (en) |
-
1977
- 1977-12-08 JP JP14750577A patent/JPS5479573A/en active Pending
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