JPS5477579A - Semiconductor device and production of the same - Google Patents

Semiconductor device and production of the same

Info

Publication number
JPS5477579A
JPS5477579A JP14525977A JP14525977A JPS5477579A JP S5477579 A JPS5477579 A JP S5477579A JP 14525977 A JP14525977 A JP 14525977A JP 14525977 A JP14525977 A JP 14525977A JP S5477579 A JPS5477579 A JP S5477579A
Authority
JP
Japan
Prior art keywords
substrate
side faces
islands
island
rings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14525977A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6112394B2 (enrdf_load_stackoverflow
Inventor
Atsuo Nishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP14525977A priority Critical patent/JPS5477579A/ja
Publication of JPS5477579A publication Critical patent/JPS5477579A/ja
Publication of JPS6112394B2 publication Critical patent/JPS6112394B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6706—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing leakage current 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H10D30/6759—Silicon-on-sapphire [SOS] substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Drying Of Semiconductors (AREA)
JP14525977A 1977-12-02 1977-12-02 Semiconductor device and production of the same Granted JPS5477579A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14525977A JPS5477579A (en) 1977-12-02 1977-12-02 Semiconductor device and production of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14525977A JPS5477579A (en) 1977-12-02 1977-12-02 Semiconductor device and production of the same

Publications (2)

Publication Number Publication Date
JPS5477579A true JPS5477579A (en) 1979-06-21
JPS6112394B2 JPS6112394B2 (enrdf_load_stackoverflow) 1986-04-08

Family

ID=15380987

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14525977A Granted JPS5477579A (en) 1977-12-02 1977-12-02 Semiconductor device and production of the same

Country Status (1)

Country Link
JP (1) JPS5477579A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5618441A (en) * 1979-07-23 1981-02-21 Fujitsu Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5618441A (en) * 1979-07-23 1981-02-21 Fujitsu Ltd Semiconductor device

Also Published As

Publication number Publication date
JPS6112394B2 (enrdf_load_stackoverflow) 1986-04-08

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