JPS5475993A - Charge transfer-type semiconductor device - Google Patents
Charge transfer-type semiconductor deviceInfo
- Publication number
- JPS5475993A JPS5475993A JP14346577A JP14346577A JPS5475993A JP S5475993 A JPS5475993 A JP S5475993A JP 14346577 A JP14346577 A JP 14346577A JP 14346577 A JP14346577 A JP 14346577A JP S5475993 A JPS5475993 A JP S5475993A
- Authority
- JP
- Japan
- Prior art keywords
- charge
- center
- gate
- input
- transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000003990 capacitor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76866—Surface Channel CCD
- H01L29/76883—Three-Phase CCD
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Networks Using Active Elements (AREA)
Abstract
PURPOSE:To make a shift register high-speed by injecting beforehand impurity, which functions as a charge generation center, only under the transfer electrode near an input part and generating always fixed-quantity charge from this center and using this charge as facet zero charge. CONSTITUTION:Transfer electrodes 3, 4 and 5 are formed near one another through gate insulating film 2 on P-type Si substrate 1, thereby constituting a transfer capacitor group. Meanwhile, input gate 11 is provided at the edge of film 2, and input PN junction element 13 is formed adjacently to gate 11 in substrate 1, and output PN junction element 14 is provided adjacently to the last transfer capacitor 5. In the shift register constituted in this manner, charge generation center 19 using Be, Ce, Ir, etc., is arranged only under the first electrode 3. Thus, when input gate 11 has become an on-state, the facet zero charge from center 19 is superposed onto the injected signal charge and they become transferred charge, so that the charge can be prevented from remaining to be taken out.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14346577A JPS5475993A (en) | 1977-11-29 | 1977-11-29 | Charge transfer-type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14346577A JPS5475993A (en) | 1977-11-29 | 1977-11-29 | Charge transfer-type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5475993A true JPS5475993A (en) | 1979-06-18 |
Family
ID=15339330
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14346577A Pending JPS5475993A (en) | 1977-11-29 | 1977-11-29 | Charge transfer-type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5475993A (en) |
-
1977
- 1977-11-29 JP JP14346577A patent/JPS5475993A/en active Pending
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