JPS5474358A - Hysteresis circuit - Google Patents

Hysteresis circuit

Info

Publication number
JPS5474358A
JPS5474358A JP14297077A JP14297077A JPS5474358A JP S5474358 A JPS5474358 A JP S5474358A JP 14297077 A JP14297077 A JP 14297077A JP 14297077 A JP14297077 A JP 14297077A JP S5474358 A JPS5474358 A JP S5474358A
Authority
JP
Japan
Prior art keywords
mos transistors
input
transistors
hysteresis
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14297077A
Other languages
Japanese (ja)
Inventor
Shinichi Miyake
Takao Nano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Sanyo Electric Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP14297077A priority Critical patent/JPS5474358A/en
Publication of JPS5474358A publication Critical patent/JPS5474358A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/3565—Bistables with hysteresis, e.g. Schmitt trigger

Abstract

PURPOSE:To obtain excellent hysteresis characteristics by switching complementary MOS transistors of the same polarity connected in series to complementary MOS transistors corresponding to the input to an inverter circuit. CONSTITUTION:Both MOS transistors TP4 and TN4, connected in series to MOS transistors TP2 and TN2 of the hysteresis circuit, function to interrupt forcibly transistors TP2 and TN2, thereby making sudden the rise and fall of input-output characteristics of inverter circuit 11. When transistor TP2 conducts, input-output characteristics are shifted to the VDD side since the impedance at the transistor TP1 side becomes smaller because of the existence of transistors TP2 and TP4, so that sudden hysteresis characteristics can be obtained.
JP14297077A 1977-11-25 1977-11-25 Hysteresis circuit Pending JPS5474358A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14297077A JPS5474358A (en) 1977-11-25 1977-11-25 Hysteresis circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14297077A JPS5474358A (en) 1977-11-25 1977-11-25 Hysteresis circuit

Publications (1)

Publication Number Publication Date
JPS5474358A true JPS5474358A (en) 1979-06-14

Family

ID=15327885

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14297077A Pending JPS5474358A (en) 1977-11-25 1977-11-25 Hysteresis circuit

Country Status (1)

Country Link
JP (1) JPS5474358A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3904888A (en) * 1974-05-17 1975-09-09 Rca Corp Circuits exhibiting hysteresis using transistors of complementary conductivity type

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3904888A (en) * 1974-05-17 1975-09-09 Rca Corp Circuits exhibiting hysteresis using transistors of complementary conductivity type

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