JPS5474353A - Hysteresis circuit - Google Patents

Hysteresis circuit

Info

Publication number
JPS5474353A
JPS5474353A JP14297177A JP14297177A JPS5474353A JP S5474353 A JPS5474353 A JP S5474353A JP 14297177 A JP14297177 A JP 14297177A JP 14297177 A JP14297177 A JP 14297177A JP S5474353 A JPS5474353 A JP S5474353A
Authority
JP
Japan
Prior art keywords
transistors
transistor
ignored
input
improved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14297177A
Other languages
Japanese (ja)
Inventor
Shinichi Miyake
Takao Nano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Sanyo Electric Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP14297177A priority Critical patent/JPS5474353A/en
Publication of JPS5474353A publication Critical patent/JPS5474353A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • H03K3/3565Bistables with hysteresis, e.g. Schmitt trigger

Abstract

PURPOSE:To obtain a hysteresis circuit with excellent hysteresis characteristics, by switching a complementary MOS transistor connected in series to an inverter circuit corresponding to the input to the inverter circuit. CONSTITUTION:Complementary MOS transistors TP1 and TN1 are of a load type and small size, and transistors TP2, TN2, TP4, and TN4 are of a drive type and large size. In this case, since the impedance of transistor TP1 becomes much larger than those of transistors TP2 and TP4, TP1 can be ignored, and the gate voltage of transistor TP2 is held constant, so that it can also be ignored. In this way, input- output characteristics can be improved by transistors TP2 and TP4. Further, when transistors conduct, characteristics are also improved by transistor TN2 and TN4 in the same way.
JP14297177A 1977-11-25 1977-11-25 Hysteresis circuit Pending JPS5474353A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14297177A JPS5474353A (en) 1977-11-25 1977-11-25 Hysteresis circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14297177A JPS5474353A (en) 1977-11-25 1977-11-25 Hysteresis circuit

Publications (1)

Publication Number Publication Date
JPS5474353A true JPS5474353A (en) 1979-06-14

Family

ID=15327910

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14297177A Pending JPS5474353A (en) 1977-11-25 1977-11-25 Hysteresis circuit

Country Status (1)

Country Link
JP (1) JPS5474353A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54121051A (en) * 1978-03-13 1979-09-19 Nec Corp Complementary mos field effect transistor circuit
JPS586620A (en) * 1981-07-03 1983-01-14 Toshiba Corp Schmitt trigger circuit
JPS58182914A (en) * 1982-04-21 1983-10-26 Hitachi Ltd Cmos hysteresis circuit
EP0590326A1 (en) * 1992-09-29 1994-04-06 Siemens Aktiengesellschaft CMOS input stage
US5444392A (en) * 1992-09-29 1995-08-22 Siemens Ag CMOS input stage

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3904888A (en) * 1974-05-17 1975-09-09 Rca Corp Circuits exhibiting hysteresis using transistors of complementary conductivity type

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3904888A (en) * 1974-05-17 1975-09-09 Rca Corp Circuits exhibiting hysteresis using transistors of complementary conductivity type

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54121051A (en) * 1978-03-13 1979-09-19 Nec Corp Complementary mos field effect transistor circuit
JPS623611B2 (en) * 1978-03-13 1987-01-26 Nippon Electric Co
JPS586620A (en) * 1981-07-03 1983-01-14 Toshiba Corp Schmitt trigger circuit
JPS6358493B2 (en) * 1981-07-03 1988-11-16
JPS58182914A (en) * 1982-04-21 1983-10-26 Hitachi Ltd Cmos hysteresis circuit
EP0590326A1 (en) * 1992-09-29 1994-04-06 Siemens Aktiengesellschaft CMOS input stage
US5444392A (en) * 1992-09-29 1995-08-22 Siemens Ag CMOS input stage

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