JPS5471990A - Etching method of semiconductor slice - Google Patents

Abstract

PURPOSE: To curtail the retraction distance of slice periphereal edge as well as to decrease the fluctuation of thickness, by dipping an adhesion plate on which a semiconductor is adhered into etching solution substantially in a horizontal position, and etching while moving vertically and rotating the plate.

CONSTITUTION: An adhesion plate 5 to which Si slice 3 is adhered by using acid- proof wax 4 is dipped horizontally in an etching bath 2 filled with etching solution, and a driving mechanism provides a support bar 6 which is holding the adhesion plate 5 with two kinds of movement, namely vertical movement shown by arrows X, X', and rotary movement shown by arrow Y. Thus, the etching solutions runs in the direction of dotted line arrow mark α when the adhesion plate 5 moves in the direction of X namely upwards, and in the direction of solid line arrow mark β when it moves in the direction of X' namely downwards. Moreover, since rotary movement in the direction of Y is provided at the same time, bubbles depositing on the slice 3 scatter, and the retraction distance l' from the peripheral part of the slice 3 towards the center is extremely shortened.

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