JPS5457876A - Charge transfer device - Google Patents

Charge transfer device

Info

Publication number
JPS5457876A
JPS5457876A JP12402277A JP12402277A JPS5457876A JP S5457876 A JPS5457876 A JP S5457876A JP 12402277 A JP12402277 A JP 12402277A JP 12402277 A JP12402277 A JP 12402277A JP S5457876 A JPS5457876 A JP S5457876A
Authority
JP
Japan
Prior art keywords
diffusion region
transfer device
charge transfer
phid
gates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12402277A
Other languages
Japanese (ja)
Inventor
Kohei Funahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12402277A priority Critical patent/JPS5457876A/en
Publication of JPS5457876A publication Critical patent/JPS5457876A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76816—Output structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To obtain a high S/N ratio, by enabling a charge transfer device to hold signal charges in a floating diffusion region during a two-bit interval. CONSTITUTION:The output part of the charge-coupled device on P-type silicon substrate P-Si is provided with four gates phiA to phiD, the substrate between gates phiB and phiC is provided with n<+>-type diffusion region FD, and the n<+>-type diffusion region as a drain is made close to under gate phiD. Gate E of a MOSFET is connected to the above-mentioned FD and used as a cathode follower.
JP12402277A 1977-10-18 1977-10-18 Charge transfer device Pending JPS5457876A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12402277A JPS5457876A (en) 1977-10-18 1977-10-18 Charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12402277A JPS5457876A (en) 1977-10-18 1977-10-18 Charge transfer device

Publications (1)

Publication Number Publication Date
JPS5457876A true JPS5457876A (en) 1979-05-10

Family

ID=14875084

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12402277A Pending JPS5457876A (en) 1977-10-18 1977-10-18 Charge transfer device

Country Status (1)

Country Link
JP (1) JPS5457876A (en)

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