JPS5453966A - Development method of electron beam resist - Google Patents

Development method of electron beam resist

Info

Publication number
JPS5453966A
JPS5453966A JP12065677A JP12065677A JPS5453966A JP S5453966 A JPS5453966 A JP S5453966A JP 12065677 A JP12065677 A JP 12065677A JP 12065677 A JP12065677 A JP 12065677A JP S5453966 A JPS5453966 A JP S5453966A
Authority
JP
Japan
Prior art keywords
water
development
electron beam
poly
copolymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12065677A
Other languages
Japanese (ja)
Other versions
JPS6227535B2 (en
Inventor
Takateru Asano
Tsutomu Tsujimura
Hideo Kuniyoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Yakuhin Kogyo KK
Victor Company of Japan Ltd
Panasonic Holdings Corp
Original Assignee
Fuji Yakuhin Kogyo KK
Victor Company of Japan Ltd
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Yakuhin Kogyo KK, Victor Company of Japan Ltd, Matsushita Electric Industrial Co Ltd filed Critical Fuji Yakuhin Kogyo KK
Priority to JP12065677A priority Critical patent/JPS5453966A/en
Publication of JPS5453966A publication Critical patent/JPS5453966A/en
Publication of JPS6227535B2 publication Critical patent/JPS6227535B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Wet Developing In Electrophotography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE: To develop the resist taking the major component for the poly α cyanoacrylate, poly α carbamylacrylate, or the copolymer of the both expressed in a given generic equation with the development solution including water.
CONSTITUTION: Since the electron beam resist of copolymer system is produced for water soluble component with the beam emission if the copolymer component is specified, excellent relief can easily be obtained by giving water to the development solution or adding the water cleaning process in the development process only. The resist film is formed by solving the poly α cyanoethyl-acrylate into cyclohexanone and electron beam is emitted after heat treatment. Then, it is immersed in the developing solution in which ethylacetate and methylisobuthylketone is 1:1 for 90 seconds at room temperature and development is made by immersing it in the liquid in which isopropanol and water are 3:1. The developed screen obtained can be discovered for any flaw with the magnification of 10 thousand and accurate line can be observed
COPYRIGHT: (C)1979,JPO&Japio
JP12065677A 1977-10-07 1977-10-07 Development method of electron beam resist Granted JPS5453966A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12065677A JPS5453966A (en) 1977-10-07 1977-10-07 Development method of electron beam resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12065677A JPS5453966A (en) 1977-10-07 1977-10-07 Development method of electron beam resist

Publications (2)

Publication Number Publication Date
JPS5453966A true JPS5453966A (en) 1979-04-27
JPS6227535B2 JPS6227535B2 (en) 1987-06-15

Family

ID=14791624

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12065677A Granted JPS5453966A (en) 1977-10-07 1977-10-07 Development method of electron beam resist

Country Status (1)

Country Link
JP (1) JPS5453966A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01273039A (en) * 1988-04-26 1989-10-31 Toppan Printing Co Ltd Positive type electron beam resist
JP2004027207A (en) * 2002-05-09 2004-01-29 Daicel Chem Ind Ltd Method for producing molecule-recognizing polymer
CN110133965A (en) * 2018-02-09 2019-08-16 台湾永光化学工业股份有限公司 Chemical amplification positive light resistance composition

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01273039A (en) * 1988-04-26 1989-10-31 Toppan Printing Co Ltd Positive type electron beam resist
JP2004027207A (en) * 2002-05-09 2004-01-29 Daicel Chem Ind Ltd Method for producing molecule-recognizing polymer
CN110133965A (en) * 2018-02-09 2019-08-16 台湾永光化学工业股份有限公司 Chemical amplification positive light resistance composition
CN110133965B (en) * 2018-02-09 2023-04-07 台湾永光化学工业股份有限公司 Chemically amplified positive resist composition

Also Published As

Publication number Publication date
JPS6227535B2 (en) 1987-06-15

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