JPS5445581A - Manufacture for charge transfer device - Google Patents
Manufacture for charge transfer deviceInfo
- Publication number
- JPS5445581A JPS5445581A JP11247477A JP11247477A JPS5445581A JP S5445581 A JPS5445581 A JP S5445581A JP 11247477 A JP11247477 A JP 11247477A JP 11247477 A JP11247477 A JP 11247477A JP S5445581 A JPS5445581 A JP S5445581A
- Authority
- JP
- Japan
- Prior art keywords
- film
- polycrystal
- gate
- region
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823406—Combination of charge coupled devices, i.e. CCD, or BBD
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11247477A JPS5445581A (en) | 1977-09-19 | 1977-09-19 | Manufacture for charge transfer device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11247477A JPS5445581A (en) | 1977-09-19 | 1977-09-19 | Manufacture for charge transfer device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5445581A true JPS5445581A (en) | 1979-04-10 |
Family
ID=14587533
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11247477A Pending JPS5445581A (en) | 1977-09-19 | 1977-09-19 | Manufacture for charge transfer device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5445581A (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002110961A (ja) * | 2000-09-26 | 2002-04-12 | New Japan Radio Co Ltd | 電荷結合素子の製造方法 |
-
1977
- 1977-09-19 JP JP11247477A patent/JPS5445581A/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002110961A (ja) * | 2000-09-26 | 2002-04-12 | New Japan Radio Co Ltd | 電荷結合素子の製造方法 |
| JP4562890B2 (ja) * | 2000-09-26 | 2010-10-13 | 新日本無線株式会社 | 電荷結合素子の製造方法 |
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