JPS5436195A - Manufacture for charge tranfer device - Google Patents

Manufacture for charge tranfer device

Info

Publication number
JPS5436195A
JPS5436195A JP10240177A JP10240177A JPS5436195A JP S5436195 A JPS5436195 A JP S5436195A JP 10240177 A JP10240177 A JP 10240177A JP 10240177 A JP10240177 A JP 10240177A JP S5436195 A JPS5436195 A JP S5436195A
Authority
JP
Japan
Prior art keywords
manufacture
high temperature
ion injection
thermal oxidation
charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10240177A
Other languages
Japanese (ja)
Inventor
Haruo Okano
Koichi Sekine
Nozomi Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10240177A priority Critical patent/JPS5436195A/en
Publication of JPS5436195A publication Critical patent/JPS5436195A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To restrict the growing of lamination deficiency due to ion injection and high temperature thermal oxidation simply and effectively, by performing thermal treatment under non-oxidized gas atmosphere, before the high temperature thermal oxidation after ion injection process to the channel stop region.
JP10240177A 1977-08-26 1977-08-26 Manufacture for charge tranfer device Pending JPS5436195A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10240177A JPS5436195A (en) 1977-08-26 1977-08-26 Manufacture for charge tranfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10240177A JPS5436195A (en) 1977-08-26 1977-08-26 Manufacture for charge tranfer device

Publications (1)

Publication Number Publication Date
JPS5436195A true JPS5436195A (en) 1979-03-16

Family

ID=14326414

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10240177A Pending JPS5436195A (en) 1977-08-26 1977-08-26 Manufacture for charge tranfer device

Country Status (1)

Country Link
JP (1) JPS5436195A (en)

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