JPS5423467A - Singlecrystal growing method for binary semiconductor - Google Patents

Singlecrystal growing method for binary semiconductor

Info

Publication number
JPS5423467A
JPS5423467A JP8911177A JP8911177A JPS5423467A JP S5423467 A JPS5423467 A JP S5423467A JP 8911177 A JP8911177 A JP 8911177A JP 8911177 A JP8911177 A JP 8911177A JP S5423467 A JPS5423467 A JP S5423467A
Authority
JP
Japan
Prior art keywords
singlecrystal
growing method
binary semiconductor
lead
ample
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8911177A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5627480B2 (enExample
Inventor
Koji Shinohara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JAPAN ELECTRONIC IND DEV ASSOC<JEIDA>
Fujitsu Ltd
Original Assignee
JAPAN ELECTRONIC IND DEV ASSOC<JEIDA>
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JAPAN ELECTRONIC IND DEV ASSOC<JEIDA>, Fujitsu Ltd filed Critical JAPAN ELECTRONIC IND DEV ASSOC<JEIDA>
Priority to JP8911177A priority Critical patent/JPS5423467A/ja
Publication of JPS5423467A publication Critical patent/JPS5423467A/ja
Publication of JPS5627480B2 publication Critical patent/JPS5627480B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Bipolar Transistors (AREA)
JP8911177A 1977-07-25 1977-07-25 Singlecrystal growing method for binary semiconductor Granted JPS5423467A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8911177A JPS5423467A (en) 1977-07-25 1977-07-25 Singlecrystal growing method for binary semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8911177A JPS5423467A (en) 1977-07-25 1977-07-25 Singlecrystal growing method for binary semiconductor

Publications (2)

Publication Number Publication Date
JPS5423467A true JPS5423467A (en) 1979-02-22
JPS5627480B2 JPS5627480B2 (enExample) 1981-06-25

Family

ID=13961771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8911177A Granted JPS5423467A (en) 1977-07-25 1977-07-25 Singlecrystal growing method for binary semiconductor

Country Status (1)

Country Link
JP (1) JPS5423467A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5427767A (en) * 1977-08-03 1979-03-02 Fujitsu Ltd Single crystal growing method of multielement semiconductors
JP2002275000A (ja) * 2001-03-14 2002-09-25 Res Inst Electric Magnetic Alloys 高平坦性ファセットを有する高品質バルク単結晶の成長法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57155383U (enExample) * 1981-03-25 1982-09-29

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5427767A (en) * 1977-08-03 1979-03-02 Fujitsu Ltd Single crystal growing method of multielement semiconductors
JP2002275000A (ja) * 2001-03-14 2002-09-25 Res Inst Electric Magnetic Alloys 高平坦性ファセットを有する高品質バルク単結晶の成長法

Also Published As

Publication number Publication date
JPS5627480B2 (enExample) 1981-06-25

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