JPS5423467A - Singlecrystal growing method for binary semiconductor - Google Patents

Singlecrystal growing method for binary semiconductor

Info

Publication number
JPS5423467A
JPS5423467A JP8911177A JP8911177A JPS5423467A JP S5423467 A JPS5423467 A JP S5423467A JP 8911177 A JP8911177 A JP 8911177A JP 8911177 A JP8911177 A JP 8911177A JP S5423467 A JPS5423467 A JP S5423467A
Authority
JP
Japan
Prior art keywords
singlecrystal
growing method
binary semiconductor
lead
ample
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8911177A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5627480B2 (enrdf_load_stackoverflow
Inventor
Koji Shinohara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JAPAN ELECTRONIC IND DEV ASSOC<JEIDA>
Fujitsu Ltd
Original Assignee
JAPAN ELECTRONIC IND DEV ASSOC<JEIDA>
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JAPAN ELECTRONIC IND DEV ASSOC<JEIDA>, Fujitsu Ltd filed Critical JAPAN ELECTRONIC IND DEV ASSOC<JEIDA>
Priority to JP8911177A priority Critical patent/JPS5423467A/ja
Publication of JPS5423467A publication Critical patent/JPS5423467A/ja
Publication of JPS5627480B2 publication Critical patent/JPS5627480B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Bipolar Transistors (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP8911177A 1977-07-25 1977-07-25 Singlecrystal growing method for binary semiconductor Granted JPS5423467A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8911177A JPS5423467A (en) 1977-07-25 1977-07-25 Singlecrystal growing method for binary semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8911177A JPS5423467A (en) 1977-07-25 1977-07-25 Singlecrystal growing method for binary semiconductor

Publications (2)

Publication Number Publication Date
JPS5423467A true JPS5423467A (en) 1979-02-22
JPS5627480B2 JPS5627480B2 (enrdf_load_stackoverflow) 1981-06-25

Family

ID=13961771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8911177A Granted JPS5423467A (en) 1977-07-25 1977-07-25 Singlecrystal growing method for binary semiconductor

Country Status (1)

Country Link
JP (1) JPS5423467A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5427767A (en) * 1977-08-03 1979-03-02 Fujitsu Ltd Single crystal growing method of multielement semiconductors
JP2002275000A (ja) * 2001-03-14 2002-09-25 Res Inst Electric Magnetic Alloys 高平坦性ファセットを有する高品質バルク単結晶の成長法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57155383U (enrdf_load_stackoverflow) * 1981-03-25 1982-09-29

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5427767A (en) * 1977-08-03 1979-03-02 Fujitsu Ltd Single crystal growing method of multielement semiconductors
JP2002275000A (ja) * 2001-03-14 2002-09-25 Res Inst Electric Magnetic Alloys 高平坦性ファセットを有する高品質バルク単結晶の成長法

Also Published As

Publication number Publication date
JPS5627480B2 (enrdf_load_stackoverflow) 1981-06-25

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