JPS54162972A - Insulated gate type field effect transistor and its manufacture - Google Patents

Insulated gate type field effect transistor and its manufacture

Info

Publication number
JPS54162972A
JPS54162972A JP7154978A JP7154978A JPS54162972A JP S54162972 A JPS54162972 A JP S54162972A JP 7154978 A JP7154978 A JP 7154978A JP 7154978 A JP7154978 A JP 7154978A JP S54162972 A JPS54162972 A JP S54162972A
Authority
JP
Japan
Prior art keywords
region
gate
gate electrode
manufacture
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7154978A
Other languages
Japanese (ja)
Inventor
Takeo Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7154978A priority Critical patent/JPS54162972A/en
Publication of JPS54162972A publication Critical patent/JPS54162972A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To omit the positioning of the gate electrode to the source and drain regions by applying the Si gate self-alignment tequnique together with the ion implantation technique.
CONSTITUTION: Field insulator film 12 is formed to semiconductor substrate 10 of single conduction type as well as the areas except for active region 11 with partial burying into substrate 10. Then other conduction-type source region 19 and drain region 20 are formed in consideration of the gate length along with ion injection region 19' and 20' of conduction type formed in extension from region 19 and 20 and in the same sizes between them. Gate insulator 13' is provided in overlap to region 19 and 20, and poly-crystal Si gate electrode 14' is formed in agreement with region 19' and 20'. In such constitution, electrode 14' is formed simultaneously with region 19 and 20 using gate 4' as the mask, and then region 19' and 20' can be formed. Furthermore, no overlap is caused between gate electrode 15 and regions 19/20, thus eliminating the mirror effect caused by the parasitic capacity.
COPYRIGHT: (C)1979,JPO&Japio
JP7154978A 1978-06-15 1978-06-15 Insulated gate type field effect transistor and its manufacture Pending JPS54162972A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7154978A JPS54162972A (en) 1978-06-15 1978-06-15 Insulated gate type field effect transistor and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7154978A JPS54162972A (en) 1978-06-15 1978-06-15 Insulated gate type field effect transistor and its manufacture

Publications (1)

Publication Number Publication Date
JPS54162972A true JPS54162972A (en) 1979-12-25

Family

ID=13463917

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7154978A Pending JPS54162972A (en) 1978-06-15 1978-06-15 Insulated gate type field effect transistor and its manufacture

Country Status (1)

Country Link
JP (1) JPS54162972A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4826971A (en) * 1971-08-19 1973-04-09
JPS5114275A (en) * 1974-07-25 1976-02-04 Fujitsu Ltd Handotaisochino seizohoho
JPS5340282A (en) * 1976-09-25 1978-04-12 Mitsubishi Electric Corp Manufacture of semiconductor unit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4826971A (en) * 1971-08-19 1973-04-09
JPS5114275A (en) * 1974-07-25 1976-02-04 Fujitsu Ltd Handotaisochino seizohoho
JPS5340282A (en) * 1976-09-25 1978-04-12 Mitsubishi Electric Corp Manufacture of semiconductor unit

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