JPS54162972A - Insulated gate type field effect transistor and its manufacture - Google Patents
Insulated gate type field effect transistor and its manufactureInfo
- Publication number
- JPS54162972A JPS54162972A JP7154978A JP7154978A JPS54162972A JP S54162972 A JPS54162972 A JP S54162972A JP 7154978 A JP7154978 A JP 7154978A JP 7154978 A JP7154978 A JP 7154978A JP S54162972 A JPS54162972 A JP S54162972A
- Authority
- JP
- Japan
- Prior art keywords
- region
- gate
- gate electrode
- manufacture
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To omit the positioning of the gate electrode to the source and drain regions by applying the Si gate self-alignment tequnique together with the ion implantation technique.
CONSTITUTION: Field insulator film 12 is formed to semiconductor substrate 10 of single conduction type as well as the areas except for active region 11 with partial burying into substrate 10. Then other conduction-type source region 19 and drain region 20 are formed in consideration of the gate length along with ion injection region 19' and 20' of conduction type formed in extension from region 19 and 20 and in the same sizes between them. Gate insulator 13' is provided in overlap to region 19 and 20, and poly-crystal Si gate electrode 14' is formed in agreement with region 19' and 20'. In such constitution, electrode 14' is formed simultaneously with region 19 and 20 using gate 4' as the mask, and then region 19' and 20' can be formed. Furthermore, no overlap is caused between gate electrode 15 and regions 19/20, thus eliminating the mirror effect caused by the parasitic capacity.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7154978A JPS54162972A (en) | 1978-06-15 | 1978-06-15 | Insulated gate type field effect transistor and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7154978A JPS54162972A (en) | 1978-06-15 | 1978-06-15 | Insulated gate type field effect transistor and its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54162972A true JPS54162972A (en) | 1979-12-25 |
Family
ID=13463917
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7154978A Pending JPS54162972A (en) | 1978-06-15 | 1978-06-15 | Insulated gate type field effect transistor and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54162972A (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4826971A (en) * | 1971-08-19 | 1973-04-09 | ||
JPS5114275A (en) * | 1974-07-25 | 1976-02-04 | Fujitsu Ltd | Handotaisochino seizohoho |
JPS5340282A (en) * | 1976-09-25 | 1978-04-12 | Mitsubishi Electric Corp | Manufacture of semiconductor unit |
-
1978
- 1978-06-15 JP JP7154978A patent/JPS54162972A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4826971A (en) * | 1971-08-19 | 1973-04-09 | ||
JPS5114275A (en) * | 1974-07-25 | 1976-02-04 | Fujitsu Ltd | Handotaisochino seizohoho |
JPS5340282A (en) * | 1976-09-25 | 1978-04-12 | Mitsubishi Electric Corp | Manufacture of semiconductor unit |
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