JPS54160568A - Thin film forming equipment for discharge chemical reaction - Google Patents
Thin film forming equipment for discharge chemical reactionInfo
- Publication number
- JPS54160568A JPS54160568A JP7018078A JP7018078A JPS54160568A JP S54160568 A JPS54160568 A JP S54160568A JP 7018078 A JP7018078 A JP 7018078A JP 7018078 A JP7018078 A JP 7018078A JP S54160568 A JPS54160568 A JP S54160568A
- Authority
- JP
- Japan
- Prior art keywords
- substrates
- thin film
- pipes
- holes
- chemical reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7018078A JPS54160568A (en) | 1978-06-09 | 1978-06-09 | Thin film forming equipment for discharge chemical reaction |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7018078A JPS54160568A (en) | 1978-06-09 | 1978-06-09 | Thin film forming equipment for discharge chemical reaction |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54160568A true JPS54160568A (en) | 1979-12-19 |
JPS6124466B2 JPS6124466B2 (enrdf_load_stackoverflow) | 1986-06-11 |
Family
ID=13424062
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7018078A Granted JPS54160568A (en) | 1978-06-09 | 1978-06-09 | Thin film forming equipment for discharge chemical reaction |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54160568A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60215763A (ja) * | 1984-04-09 | 1985-10-29 | Nippon Steel Corp | 被膜形成方法 |
JP2009179885A (ja) * | 2003-02-12 | 2009-08-13 | Jtekt Corp | アモルファス炭素膜の成膜装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5216990A (en) * | 1975-07-28 | 1977-02-08 | Rca Corp | Semiconductor device |
JPS5275983A (en) * | 1975-12-17 | 1977-06-25 | Lfe Corp | Device for applying dielectric layer employing glow discharge |
JPS5391665A (en) * | 1977-01-24 | 1978-08-11 | Hitachi Ltd | Plasma cvd device |
JPS5491048A (en) * | 1977-12-05 | 1979-07-19 | Plasma Physics Corp | Method of and device for accumulating thin films |
-
1978
- 1978-06-09 JP JP7018078A patent/JPS54160568A/ja active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5216990A (en) * | 1975-07-28 | 1977-02-08 | Rca Corp | Semiconductor device |
JPS5275983A (en) * | 1975-12-17 | 1977-06-25 | Lfe Corp | Device for applying dielectric layer employing glow discharge |
JPS5391665A (en) * | 1977-01-24 | 1978-08-11 | Hitachi Ltd | Plasma cvd device |
JPS5491048A (en) * | 1977-12-05 | 1979-07-19 | Plasma Physics Corp | Method of and device for accumulating thin films |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60215763A (ja) * | 1984-04-09 | 1985-10-29 | Nippon Steel Corp | 被膜形成方法 |
JP2009179885A (ja) * | 2003-02-12 | 2009-08-13 | Jtekt Corp | アモルファス炭素膜の成膜装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS6124466B2 (enrdf_load_stackoverflow) | 1986-06-11 |
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