JPS54160568A - Thin film forming equipment for discharge chemical reaction - Google Patents

Thin film forming equipment for discharge chemical reaction

Info

Publication number
JPS54160568A
JPS54160568A JP7018078A JP7018078A JPS54160568A JP S54160568 A JPS54160568 A JP S54160568A JP 7018078 A JP7018078 A JP 7018078A JP 7018078 A JP7018078 A JP 7018078A JP S54160568 A JPS54160568 A JP S54160568A
Authority
JP
Japan
Prior art keywords
substrates
thin film
pipes
holes
chemical reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7018078A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6124466B2 (enrdf_load_stackoverflow
Inventor
Tatsuo Asamaki
Aoshi Horiguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP7018078A priority Critical patent/JPS54160568A/ja
Publication of JPS54160568A publication Critical patent/JPS54160568A/ja
Publication of JPS6124466B2 publication Critical patent/JPS6124466B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
JP7018078A 1978-06-09 1978-06-09 Thin film forming equipment for discharge chemical reaction Granted JPS54160568A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7018078A JPS54160568A (en) 1978-06-09 1978-06-09 Thin film forming equipment for discharge chemical reaction

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7018078A JPS54160568A (en) 1978-06-09 1978-06-09 Thin film forming equipment for discharge chemical reaction

Publications (2)

Publication Number Publication Date
JPS54160568A true JPS54160568A (en) 1979-12-19
JPS6124466B2 JPS6124466B2 (enrdf_load_stackoverflow) 1986-06-11

Family

ID=13424062

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7018078A Granted JPS54160568A (en) 1978-06-09 1978-06-09 Thin film forming equipment for discharge chemical reaction

Country Status (1)

Country Link
JP (1) JPS54160568A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60215763A (ja) * 1984-04-09 1985-10-29 Nippon Steel Corp 被膜形成方法
JP2009179885A (ja) * 2003-02-12 2009-08-13 Jtekt Corp アモルファス炭素膜の成膜装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5216990A (en) * 1975-07-28 1977-02-08 Rca Corp Semiconductor device
JPS5275983A (en) * 1975-12-17 1977-06-25 Lfe Corp Device for applying dielectric layer employing glow discharge
JPS5391665A (en) * 1977-01-24 1978-08-11 Hitachi Ltd Plasma cvd device
JPS5491048A (en) * 1977-12-05 1979-07-19 Plasma Physics Corp Method of and device for accumulating thin films

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5216990A (en) * 1975-07-28 1977-02-08 Rca Corp Semiconductor device
JPS5275983A (en) * 1975-12-17 1977-06-25 Lfe Corp Device for applying dielectric layer employing glow discharge
JPS5391665A (en) * 1977-01-24 1978-08-11 Hitachi Ltd Plasma cvd device
JPS5491048A (en) * 1977-12-05 1979-07-19 Plasma Physics Corp Method of and device for accumulating thin films

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60215763A (ja) * 1984-04-09 1985-10-29 Nippon Steel Corp 被膜形成方法
JP2009179885A (ja) * 2003-02-12 2009-08-13 Jtekt Corp アモルファス炭素膜の成膜装置

Also Published As

Publication number Publication date
JPS6124466B2 (enrdf_load_stackoverflow) 1986-06-11

Similar Documents

Publication Publication Date Title
JPS5645760A (en) Vapor growth method
JPS57100627A (en) Manufacture of vertical magnetic recording medium
CN109576679B (zh) 一种燃料电池双极板碳涂层连续沉积系统及其应用
JPS5833829A (ja) 薄膜形成装置
JPS6417870A (en) Manufacture of carbon
JPS59121828A (ja) グロー放電堆積装置
JP3146112B2 (ja) プラズマcvd装置
JPS54160568A (en) Thin film forming equipment for discharge chemical reaction
JPS5737821A (en) Vapor phase reaction device
CN112663030A (zh) 立式光伏电池钝化沉积装置
JPS56123377A (en) Plasma cleaning and etching method
JPH03197682A (ja) Ecrプラズマcvd装置
CN213866409U (zh) 立式光伏电池钝化沉积装置
JPS5671927A (en) Manufacture of amorphous hydro-silicon layer
JPS6451396A (en) Device for forming thin diamond film
JPH0445580B2 (enrdf_load_stackoverflow)
CN211199400U (zh) 一种表面微波等离子体镀膜装置
JPH0463284A (ja) マイクロ波プラズマcvd装置
JPS5562160A (en) Forming method for film by glow discharge
JPH06232429A (ja) 光起電力素子及びその形成方法及びその形成装置
JPS5731130A (en) Method and device for plasma chemical vapour deposition
JPS56152963A (en) Sputtering apparatus
CN218596492U (zh) 一种磁控溅射装置
JPS5848416A (ja) 量産型薄膜生成装置
JPS6063370A (ja) アモルファス水素化シリコン膜製造装置