JPS54159881A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54159881A
JPS54159881A JP6831778A JP6831778A JPS54159881A JP S54159881 A JPS54159881 A JP S54159881A JP 6831778 A JP6831778 A JP 6831778A JP 6831778 A JP6831778 A JP 6831778A JP S54159881 A JPS54159881 A JP S54159881A
Authority
JP
Japan
Prior art keywords
region
base
collector
resistance
becomes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6831778A
Other languages
Japanese (ja)
Inventor
Kenichi Muramoto
Yutaka Tomizawa
Keizo Tani
Makoto Hideshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6831778A priority Critical patent/JPS54159881A/en
Priority to US06/044,402 priority patent/US4267557A/en
Publication of JPS54159881A publication Critical patent/JPS54159881A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE: To provide a protection diode inside a power transistor in the part between the collector and the base of the transistor as a protection circuit of the power transistor by a simple method.
CONSTITUTION: Low-resistance N+ region 11, high-resistance N- region 12, P region 13 which is formed selectively in region 12 by diffusion and becomes a base region, P+ region 13' which is provided in region 13 for arranging base electrode B subjected to ohmic connection to the base contact, H+ region 14 which is formed by performing selective diffusion in a part of the base region and becomes an emitter region, collector, base and emitter electrodes c, B and E, and N+ region which is formed by performing selective diffusion in a part of P region 13 of the base region are provided, and a diode corresponding to a protection diode is formed by junction to P region 13 of the base region.
COPYRIGHT: (C)1979,JPO&Japio
JP6831778A 1978-06-08 1978-06-08 Semiconductor device Pending JPS54159881A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP6831778A JPS54159881A (en) 1978-06-08 1978-06-08 Semiconductor device
US06/044,402 US4267557A (en) 1978-06-08 1979-06-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6831778A JPS54159881A (en) 1978-06-08 1978-06-08 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS54159881A true JPS54159881A (en) 1979-12-18

Family

ID=13370312

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6831778A Pending JPS54159881A (en) 1978-06-08 1978-06-08 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54159881A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3244949A (en) * 1962-03-16 1966-04-05 Fairchild Camera Instr Co Voltage regulator
JPS539380A (en) * 1976-07-15 1978-01-27 Kyupi Kk Apparatus for removing calyx of strawberry

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3244949A (en) * 1962-03-16 1966-04-05 Fairchild Camera Instr Co Voltage regulator
JPS539380A (en) * 1976-07-15 1978-01-27 Kyupi Kk Apparatus for removing calyx of strawberry

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