JPS54158982A - Crystal evaluating method - Google Patents

Crystal evaluating method

Info

Publication number
JPS54158982A
JPS54158982A JP6799778A JP6799778A JPS54158982A JP S54158982 A JPS54158982 A JP S54158982A JP 6799778 A JP6799778 A JP 6799778A JP 6799778 A JP6799778 A JP 6799778A JP S54158982 A JPS54158982 A JP S54158982A
Authority
JP
Japan
Prior art keywords
infrared rays
mirror
condensed
infrared ray
sample
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6799778A
Other languages
Japanese (ja)
Inventor
Hirozo Takano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6799778A priority Critical patent/JPS54158982A/en
Publication of JPS54158982A publication Critical patent/JPS54158982A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/02Details
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/02Details
    • G01J3/0205Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
    • G01J3/0208Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows using focussing or collimating elements, e.g. lenses or mirrors; performing aberration correction
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/02Details
    • G01J3/0205Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
    • G01J3/021Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows using plane or convex mirrors, parallel phase plates, or particular reflectors

Abstract

PURPOSE:To enable impurity concentration distributions such as of C, O in Si substrate to be evaluated accurately and rapidly by radiating infrared ray fluxes so as to intersect perpendicularly to the main plane of the Si substrate and yet letting the infrared rays scan in arbitrary directions. CONSTITUTION:Infrared rays generated in the light source 7 of a light source part 1 are divided to two components by concave mirrors 8, 9. The infrared rays condensed at the mirror 8 are further condensed in a concave mirror 10 and arrive at a movable mirror 14d through stationary mirrors 14a thru 14c, thus becoming the infrared ray flux on the measuring sample 5 side of a sample chamber 3. The infrared rays condensed at the mirror 9 are condensed in a concave mirror 12 and are made to the infrared ray flux 13 on the reference sample 6 side. As the mirrors 14a thru 14c are moved in a fixed direction, the sample 5 is scanned over the entire surface. The changes of only the abosorptivity of the infrared ray of the specific wavelengths in a spectroscope part 2 are plotted in a recorder 4, whereby the line analysis in the scanning direction of the infrared rays is made possible and the two-dimensional concentration distributions of the specific element are evaluated.
JP6799778A 1978-06-05 1978-06-05 Crystal evaluating method Pending JPS54158982A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6799778A JPS54158982A (en) 1978-06-05 1978-06-05 Crystal evaluating method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6799778A JPS54158982A (en) 1978-06-05 1978-06-05 Crystal evaluating method

Publications (1)

Publication Number Publication Date
JPS54158982A true JPS54158982A (en) 1979-12-15

Family

ID=13361100

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6799778A Pending JPS54158982A (en) 1978-06-05 1978-06-05 Crystal evaluating method

Country Status (1)

Country Link
JP (1) JPS54158982A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58135939A (en) * 1982-02-08 1983-08-12 Fujitsu Ltd Concentration measurement of inpurity in semiconductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58135939A (en) * 1982-02-08 1983-08-12 Fujitsu Ltd Concentration measurement of inpurity in semiconductor

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