JPS57157105A - Device for measuring thickness of thin film - Google Patents
Device for measuring thickness of thin filmInfo
- Publication number
- JPS57157105A JPS57157105A JP4179781A JP4179781A JPS57157105A JP S57157105 A JPS57157105 A JP S57157105A JP 4179781 A JP4179781 A JP 4179781A JP 4179781 A JP4179781 A JP 4179781A JP S57157105 A JPS57157105 A JP S57157105A
- Authority
- JP
- Japan
- Prior art keywords
- light
- detecting
- wavelength component
- thin film
- parallel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
PURPOSE:To enhance detecting speed and accuracy by performing spectrophotometry of light reflected from the thin film by a fixed spectroscope, scanning said spectral signals by a group of detecting elements arranged in parallel, and detecting the intensity of each wavelength component, in the measurement of the thickness of the thin film. CONSTITUTION:The light from a light source 1 is vertically projected to a semiconductor wafer 3 on a sample table 4 through a half mirror 2. When the reflected light is guided to the fixed spectroscope 5' through the half mirror, each wavelength component is dispersed at a certain angle. Multiple light detecting elements are arranged in parallel on a parallel light detector 11. The amount of the light of respective wavelength component projected on each element is independently transduced into an electric signal. The film thickness is obtained by an amplifier 8 and a processor 9 from the relationship between the intensity of each wavelength component and the wave length. When the group of the detecting elements of the detector 11 is scanned at a high speed by using an analog shift register, the detecting speed and accuracy of the dispersed light are improved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4179781A JPS57157105A (en) | 1981-03-24 | 1981-03-24 | Device for measuring thickness of thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4179781A JPS57157105A (en) | 1981-03-24 | 1981-03-24 | Device for measuring thickness of thin film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57157105A true JPS57157105A (en) | 1982-09-28 |
Family
ID=12618320
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4179781A Pending JPS57157105A (en) | 1981-03-24 | 1981-03-24 | Device for measuring thickness of thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57157105A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5966115A (en) * | 1982-10-08 | 1984-04-14 | Hitachi Ltd | Inspecting device for defect of thin film |
JPS6224102A (en) * | 1985-07-24 | 1987-02-02 | Nec Corp | Semiconductor manufacturing apparatus |
JP2001044254A (en) * | 1999-07-27 | 2001-02-16 | Sharp Corp | Electronic component manufacturing apparatus and method |
US7304744B1 (en) | 1998-12-24 | 2007-12-04 | Sharp Kabushiki Kaisha | Apparatus and method for measuring the thickness of a thin film via the intensity of reflected light |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5535214A (en) * | 1978-09-04 | 1980-03-12 | Asahi Chem Ind Co Ltd | Method and device for film-thickness measurement making use of infrared-ray interference |
-
1981
- 1981-03-24 JP JP4179781A patent/JPS57157105A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5535214A (en) * | 1978-09-04 | 1980-03-12 | Asahi Chem Ind Co Ltd | Method and device for film-thickness measurement making use of infrared-ray interference |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5966115A (en) * | 1982-10-08 | 1984-04-14 | Hitachi Ltd | Inspecting device for defect of thin film |
JPS6224102A (en) * | 1985-07-24 | 1987-02-02 | Nec Corp | Semiconductor manufacturing apparatus |
US7304744B1 (en) | 1998-12-24 | 2007-12-04 | Sharp Kabushiki Kaisha | Apparatus and method for measuring the thickness of a thin film via the intensity of reflected light |
JP2001044254A (en) * | 1999-07-27 | 2001-02-16 | Sharp Corp | Electronic component manufacturing apparatus and method |
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