JPS54154967A - Semiconductor electronic device - Google Patents

Semiconductor electronic device

Info

Publication number
JPS54154967A
JPS54154967A JP6341678A JP6341678A JPS54154967A JP S54154967 A JPS54154967 A JP S54154967A JP 6341678 A JP6341678 A JP 6341678A JP 6341678 A JP6341678 A JP 6341678A JP S54154967 A JPS54154967 A JP S54154967A
Authority
JP
Japan
Prior art keywords
film
layer
given
si3b
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6341678A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6237539B2 (OSRAM
Inventor
Hisakazu Mukai
Tetsushi Sakai
Yasusuke Yamamoto
Yoshiharu Kobayashi
Hiroki Yamauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP6341678A priority Critical patent/JPS54154967A/ja
Publication of JPS54154967A publication Critical patent/JPS54154967A/ja
Publication of JPS6237539B2 publication Critical patent/JPS6237539B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP6341678A 1978-05-29 1978-05-29 Semiconductor electronic device Granted JPS54154967A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6341678A JPS54154967A (en) 1978-05-29 1978-05-29 Semiconductor electronic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6341678A JPS54154967A (en) 1978-05-29 1978-05-29 Semiconductor electronic device

Publications (2)

Publication Number Publication Date
JPS54154967A true JPS54154967A (en) 1979-12-06
JPS6237539B2 JPS6237539B2 (OSRAM) 1987-08-13

Family

ID=13228654

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6341678A Granted JPS54154967A (en) 1978-05-29 1978-05-29 Semiconductor electronic device

Country Status (1)

Country Link
JP (1) JPS54154967A (OSRAM)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5852851A (ja) * 1981-09-24 1983-03-29 Nec Corp 半導体装置の製造方法
JPS625657A (ja) * 1985-07-01 1987-01-12 Nec Corp 半導体集積回路装置
JPS63143867A (ja) * 1986-12-08 1988-06-16 Mitsubishi Electric Corp 半導体集積回路装置
US5196357A (en) * 1991-11-18 1993-03-23 Vlsi Technology, Inc. Method of making extended polysilicon self-aligned gate overlapped lightly doped drain structure for submicron transistor

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63172098U (OSRAM) * 1987-04-30 1988-11-09
JPH01161131U (OSRAM) * 1988-04-30 1989-11-09

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5011676A (OSRAM) * 1973-06-01 1975-02-06
JPS5091288A (OSRAM) * 1973-12-12 1975-07-21

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5011676A (OSRAM) * 1973-06-01 1975-02-06
JPS5091288A (OSRAM) * 1973-12-12 1975-07-21

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5852851A (ja) * 1981-09-24 1983-03-29 Nec Corp 半導体装置の製造方法
JPS625657A (ja) * 1985-07-01 1987-01-12 Nec Corp 半導体集積回路装置
JPS63143867A (ja) * 1986-12-08 1988-06-16 Mitsubishi Electric Corp 半導体集積回路装置
US5196357A (en) * 1991-11-18 1993-03-23 Vlsi Technology, Inc. Method of making extended polysilicon self-aligned gate overlapped lightly doped drain structure for submicron transistor

Also Published As

Publication number Publication date
JPS6237539B2 (OSRAM) 1987-08-13

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