JPS5011676A - - Google Patents
Info
- Publication number
- JPS5011676A JPS5011676A JP48060878A JP6087873A JPS5011676A JP S5011676 A JPS5011676 A JP S5011676A JP 48060878 A JP48060878 A JP 48060878A JP 6087873 A JP6087873 A JP 6087873A JP S5011676 A JPS5011676 A JP S5011676A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP48060878A JPS5011676A (OSRAM) | 1973-06-01 | 1973-06-01 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP48060878A JPS5011676A (OSRAM) | 1973-06-01 | 1973-06-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5011676A true JPS5011676A (OSRAM) | 1975-02-06 |
Family
ID=13155063
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP48060878A Pending JPS5011676A (OSRAM) | 1973-06-01 | 1973-06-01 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5011676A (OSRAM) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54154967A (en) * | 1978-05-29 | 1979-12-06 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor electronic device |
| JPS5533836U (OSRAM) * | 1978-08-25 | 1980-03-04 | ||
| JPS57148370A (en) * | 1981-03-10 | 1982-09-13 | Nec Corp | Semiconductor device |
| WO1984004853A1 (en) * | 1983-05-26 | 1984-12-06 | Sony Corp | Method of manufacturing semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3600651A (en) * | 1969-12-08 | 1971-08-17 | Fairchild Camera Instr Co | Bipolar and field-effect transistor using polycrystalline epitaxial deposited silicon |
-
1973
- 1973-06-01 JP JP48060878A patent/JPS5011676A/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3600651A (en) * | 1969-12-08 | 1971-08-17 | Fairchild Camera Instr Co | Bipolar and field-effect transistor using polycrystalline epitaxial deposited silicon |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54154967A (en) * | 1978-05-29 | 1979-12-06 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor electronic device |
| JPS5533836U (OSRAM) * | 1978-08-25 | 1980-03-04 | ||
| JPS57148370A (en) * | 1981-03-10 | 1982-09-13 | Nec Corp | Semiconductor device |
| WO1984004853A1 (en) * | 1983-05-26 | 1984-12-06 | Sony Corp | Method of manufacturing semiconductor device |
| US4591398A (en) * | 1983-05-26 | 1986-05-27 | Sony Corporation | Method for manufacturing a semiconductor device utilizing self-aligned oxide-nitride masking |