JPS54152963A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS54152963A JPS54152963A JP6109478A JP6109478A JPS54152963A JP S54152963 A JPS54152963 A JP S54152963A JP 6109478 A JP6109478 A JP 6109478A JP 6109478 A JP6109478 A JP 6109478A JP S54152963 A JPS54152963 A JP S54152963A
- Authority
- JP
- Japan
- Prior art keywords
- film
- lead
- bump
- prevent
- plating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13075—Plural core members
- H01L2224/1308—Plural core members being stacked
Abstract
PURPOSE:To prevent an external lead from deteriorating and also to increase certainty by making a connection with a lead Au surface after stacking a Sn-plating film and an Au-plating film on the Au bump of a semiconductor. CONSTITUTION:Au bump 3 is plated with Sn 4 and then with Au 5 so as to prevent the contamination and loss of Sn in a preprocess. On the surface of Cu lead 7 formed on carrier tape 6, Au film 8 is provided and when an Au film is thermally pressure-welded onto the bump, Au film 5 breaks easily, forming Au-Sn junction 9 easily. Further, since the Sn surface is cleans, it is hard enough not to require sintering. In addition, the lead surface, coated with Au layer 8 as well, will never deteriorate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6109478A JPS54152963A (en) | 1978-05-24 | 1978-05-24 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6109478A JPS54152963A (en) | 1978-05-24 | 1978-05-24 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54152963A true JPS54152963A (en) | 1979-12-01 |
Family
ID=13161141
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6109478A Pending JPS54152963A (en) | 1978-05-24 | 1978-05-24 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54152963A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07105144A (en) * | 1993-07-27 | 1995-04-21 | Internatl Business Mach Corp <Ibm> | Stacking of circuited polymer dielectric panel |
-
1978
- 1978-05-24 JP JP6109478A patent/JPS54152963A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07105144A (en) * | 1993-07-27 | 1995-04-21 | Internatl Business Mach Corp <Ibm> | Stacking of circuited polymer dielectric panel |
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