JPS54152860A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS54152860A JPS54152860A JP6101978A JP6101978A JPS54152860A JP S54152860 A JPS54152860 A JP S54152860A JP 6101978 A JP6101978 A JP 6101978A JP 6101978 A JP6101978 A JP 6101978A JP S54152860 A JPS54152860 A JP S54152860A
- Authority
- JP
- Japan
- Prior art keywords
- junction
- division
- substrate
- light emitting
- distortion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Dicing (AREA)
Abstract
PURPOSE: To avoid occurrence of the distortion on the PN junction surface by giving the pressure division with the division groove provided so that it may not reach the PN junction from the surface of one side when the PN junction is formed on the semiconductor substrate and then the substrate is divided with the division groove provided.
CONSTITUTION: P-type layer 12 is epitaxial-grown on N-type GaP substrate 11, and then division groove 15 is provided via dicing so that it may not reach PN junction 13 caused from the back side of large-thickness substrate 11. Then the pressure is applied from the side of layer 12 on the other surface to form split 16 toward the area where no groove 15 is formed, thus obtaining a number of light emitting elements 17 of a fixed size. In such way, no distortion is caused on PN junction surface 13 with no deterioration of the light emitting output. This method can also be applied effectively to the division of other semiconductor elements in addition to the light emitting element.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6101978A JPS54152860A (en) | 1978-05-24 | 1978-05-24 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6101978A JPS54152860A (en) | 1978-05-24 | 1978-05-24 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54152860A true JPS54152860A (en) | 1979-12-01 |
Family
ID=13159179
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6101978A Pending JPS54152860A (en) | 1978-05-24 | 1978-05-24 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54152860A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007109783A (en) * | 2005-10-12 | 2007-04-26 | Denso Corp | Semiconductor device and its manufacturing method |
-
1978
- 1978-05-24 JP JP6101978A patent/JPS54152860A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007109783A (en) * | 2005-10-12 | 2007-04-26 | Denso Corp | Semiconductor device and its manufacturing method |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5252593A (en) | Semiconductor light receiving diode | |
JPS52104091A (en) | Light-emitting semiconductor | |
JPS538572A (en) | Field effect type transistor | |
JPS54152860A (en) | Manufacture of semiconductor device | |
JPS5417682A (en) | Semiconductor and its manufacture | |
JPS52124888A (en) | Production of solar battery | |
JPS5396666A (en) | Manufacture of semiconductor device with pn junction | |
JPS547891A (en) | Manufacture for planar semiconductor light emission device | |
JPS5517461A (en) | Wavelength detector using photo semiconductor device | |
JPS5314585A (en) | Semiconductor device | |
JPS52103982A (en) | Composite semiconductor device | |
JPS567448A (en) | Manufacture of photoelectric converting semiconductor device | |
JPS5376760A (en) | Semiconductor rectifying device | |
JPS5437486A (en) | Manufacture of gallium phosphate green-color luminous element | |
JPS5515259A (en) | Manufacturing method for light emitting element | |
JPS51138185A (en) | Semi-conductor device | |
JPS5289083A (en) | Production of semiconductor photoelectric converting element | |
JPS55125671A (en) | High withstand voltage semiconductor device | |
JPS5793567A (en) | Integrated photodetecting circuit device | |
JPS5249780A (en) | Semiconductor integrated circuit | |
JPS54125989A (en) | Semiconductor luminous element | |
JPS57143841A (en) | Insulation separating composition | |
JPS5244163A (en) | Process for productin of semiconductor element | |
JPS5373081A (en) | Manufacture of mis-type semiconductor device | |
JPS5423391A (en) | Gallium-arsenic semiconductor element |