JPS54152860A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS54152860A
JPS54152860A JP6101978A JP6101978A JPS54152860A JP S54152860 A JPS54152860 A JP S54152860A JP 6101978 A JP6101978 A JP 6101978A JP 6101978 A JP6101978 A JP 6101978A JP S54152860 A JPS54152860 A JP S54152860A
Authority
JP
Japan
Prior art keywords
junction
division
substrate
light emitting
distortion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6101978A
Other languages
Japanese (ja)
Inventor
Yoshio Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6101978A priority Critical patent/JPS54152860A/en
Publication of JPS54152860A publication Critical patent/JPS54152860A/en
Pending legal-status Critical Current

Links

Landscapes

  • Dicing (AREA)

Abstract

PURPOSE: To avoid occurrence of the distortion on the PN junction surface by giving the pressure division with the division groove provided so that it may not reach the PN junction from the surface of one side when the PN junction is formed on the semiconductor substrate and then the substrate is divided with the division groove provided.
CONSTITUTION: P-type layer 12 is epitaxial-grown on N-type GaP substrate 11, and then division groove 15 is provided via dicing so that it may not reach PN junction 13 caused from the back side of large-thickness substrate 11. Then the pressure is applied from the side of layer 12 on the other surface to form split 16 toward the area where no groove 15 is formed, thus obtaining a number of light emitting elements 17 of a fixed size. In such way, no distortion is caused on PN junction surface 13 with no deterioration of the light emitting output. This method can also be applied effectively to the division of other semiconductor elements in addition to the light emitting element.
COPYRIGHT: (C)1979,JPO&Japio
JP6101978A 1978-05-24 1978-05-24 Manufacture of semiconductor device Pending JPS54152860A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6101978A JPS54152860A (en) 1978-05-24 1978-05-24 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6101978A JPS54152860A (en) 1978-05-24 1978-05-24 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS54152860A true JPS54152860A (en) 1979-12-01

Family

ID=13159179

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6101978A Pending JPS54152860A (en) 1978-05-24 1978-05-24 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54152860A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007109783A (en) * 2005-10-12 2007-04-26 Denso Corp Semiconductor device and its manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007109783A (en) * 2005-10-12 2007-04-26 Denso Corp Semiconductor device and its manufacturing method

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