JPS54149474A - Junction type field effect transistor - Google Patents

Junction type field effect transistor

Info

Publication number
JPS54149474A
JPS54149474A JP5710078A JP5710078A JPS54149474A JP S54149474 A JPS54149474 A JP S54149474A JP 5710078 A JP5710078 A JP 5710078A JP 5710078 A JP5710078 A JP 5710078A JP S54149474 A JPS54149474 A JP S54149474A
Authority
JP
Japan
Prior art keywords
type
type region
region
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5710078A
Other languages
Japanese (ja)
Inventor
Yutaka Tomizawa
Tatsuro Mitani
Kazuhiko Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5710078A priority Critical patent/JPS54149474A/en
Publication of JPS54149474A publication Critical patent/JPS54149474A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To obtain a junction type field effect transistor, where no inversion layer is formed on the P-type region substrate, in the P channel J-FET.
CONSTITUTION: In the P channel J-FET consisting of N-type semiconductor substrate 1, P-type region 2, N-type region 3, P+ regions 4 and 5, N-type regions 6 and 7, oxide film 14 which has an aperture only on P+-type regions 4 and 5 and covers all the surface, electrode 8 which is provided on region 4 from the aperture on P+-type region 4, electrode 10 which is provided on region 5 from the aperture on P+-type region 5 and extends onto the oxide film on N-type region 3 above and the part near the P+-type region above, and electrode layer 13 which is provided on the reverse face of substrate 1, P+-type region 4 and P+-type region 5 are operated as a source and a drain respectively, and this transistor is operated as a J-FET by the control of electric fields from N-type semiconductor sunstrate 1 and N-type region 3.
COPYRIGHT: (C)1979,JPO&Japio
JP5710078A 1978-05-16 1978-05-16 Junction type field effect transistor Pending JPS54149474A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5710078A JPS54149474A (en) 1978-05-16 1978-05-16 Junction type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5710078A JPS54149474A (en) 1978-05-16 1978-05-16 Junction type field effect transistor

Publications (1)

Publication Number Publication Date
JPS54149474A true JPS54149474A (en) 1979-11-22

Family

ID=13046073

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5710078A Pending JPS54149474A (en) 1978-05-16 1978-05-16 Junction type field effect transistor

Country Status (1)

Country Link
JP (1) JPS54149474A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50151071A (en) * 1974-05-24 1975-12-04

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50151071A (en) * 1974-05-24 1975-12-04

Similar Documents

Publication Publication Date Title
JPS5286083A (en) Production of complimentary isolation gate field effect transistor
JPS5382179A (en) Field effect transistor
JPS54149474A (en) Junction type field effect transistor
JPS5412573A (en) Junction type field effect transistor and production of the same
JPS53141585A (en) Manufacture of insulating gate field effect type semiconductor device
JPS5382277A (en) Schottky gate field effect transistor
JPS5588378A (en) Semiconductor device
JPS5491074A (en) Semiconductor device
JPS5381087A (en) Gallium aresenide field effect transistor
JPS5220769A (en) Longitudinal semi-conductor unit
JPS5339088A (en) Insulated gate type field effect semiconductor device
JPS5286086A (en) Field effect transistor
JPS5552262A (en) Mos semiconductor device
JPS572579A (en) Manufacture of junction type field effect transistor
JPS52146186A (en) Semiconductor device
JPS5363987A (en) Junction type field effect transistor
JPS54113269A (en) Production of junction-type electronic field effect transistor
JPS5396770A (en) Production of mis transistor
JPS5698876A (en) Junction type fet
JPS5518072A (en) Mos semiconductor device
JPS5412566A (en) Production of semiconductor device
JPS5376770A (en) Production of insulated gate field effect transistor
JPS5530873A (en) High withstand field-effect transistor of mis type
JPS55115368A (en) Junction type field-effect transistor
JPS536581A (en) Insulated gate type field effect semiconductor device